Abstract: In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices.

Abstract: The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range.

Abstract: Prior to electrodeposition of copper onto a nickel-containing or a cobalt-containing seed layer, a semiconductor wafer is pretreated by contacting the seed layer with a pre-wetting liquid comprising cupric ions at a concentration of at least about 10 g/L, more preferably of at least about 30 g/L, and an electroplating suppressor, such as a compound from the class of polyalkylene glycols. This pre-treatment is particularly useful for wafers having one or more large recessed features, such as through silicon vias (TSVs). The pre-wetting liquid is preferably degassed prior to contact with the wafer substrate. The pretreatment is preferably performed under subatmospheric pressure to prevent bubble formation within the recessed features. After the wafer is pretreated, copper is electrodeposited from an electroplating solution (such as an acidic electroplating solution) to fill the recessed features on the wafer.

Abstract: Prior to electrodeposition of copper onto a nickel-containing or a cobalt-containing seed layer, a semiconductor wafer is pretreated by contacting the seed layer with a pre-wetting liquid comprising cupric ions at a concentration of at least about 10 g/L, more preferably of at least about 30 g/L, and an electroplating suppressor, such as a compound from the class of polyalkylene glycols. This pre-treatment is particularly useful for wafers having one or more large recessed features, such as through silicon vias (TSVs). The pre-wetting liquid is preferably degassed prior to contact with the wafer substrate. The pretreatment is preferably performed under subatmospheric pressure to prevent bubble formation within the recessed features. After the wafer is pretreated, copper is electrodeposited from an electroplating solution (such as an acidic electroplating solution) to fill the recessed features on the wafer.