Patents by Inventor Matthew Scott Rogers

Matthew Scott Rogers has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10444661
    Abstract: A toner cartridge according to one example embodiment includes a housing having a reservoir for holding toner and an outlet in fluid communication with the reservoir for exiting toner from the toner cartridge. A resiliently deflectable cam is positioned on an exterior portion of the housing to contact a media feed roll assembly when the toner cartridge is installed in the image forming device for biasing the media feed roll assembly into contact with a corresponding media feed roll in the image forming device to form a media feed nip in the image forming device.
    Type: Grant
    Filed: October 23, 2017
    Date of Patent: October 15, 2019
    Assignee: Lexmark International, Inc.
    Inventors: Gregory Alan Cavill, Jason Paul Hale, James Richard Leemhuis, David Lee Merrifield, Matthew Lee Rogers, Daniel Lee Thomas, Randal Scott Williamson
  • Patent number: 10401785
    Abstract: A replaceable imaging unit according to one example embodiment includes a photoconductor unit positioned at the front of a housing of the imaging unit. First and second alignment guides extend outward at the same height from first and second sides of the housing, respectively, on the photoconductor unit and run parallel to each other along a front-to-rear dimension of the housing. Each of the first and second alignment guides includes a front contact member at a front end thereof and a rear contact member at a rear end thereof. The front contact members are positioned further outward sideways than the rear contact members. Bottom surfaces of the front and rear contact members are unobstructed to permit the bottom surfaces of the front and rear contact members to sit on top of corresponding guide rails in the image forming device to control a vertical position of the imaging unit.
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: September 3, 2019
    Assignee: Lexmark International, Inc.
    Inventors: Brian Scott Carpenter, Jason Paul Hale, James Richard Leemhuis, Matthew Lee Rogers, Daniel Joshua Smith, Edward Lynn Triplett
  • Publication number: 20190088485
    Abstract: Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.
    Type: Application
    Filed: August 13, 2018
    Publication date: March 21, 2019
    Inventors: Matthew Scott ROGERS, Roger CURTIS, Lara HAWRYLCHAK, Ken Kaung LAI, Bernard L. HWANG, Jeffrey TOBIN, Christopher S. OLSEN, Malcolm BEVAN
  • Publication number: 20180283957
    Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.
    Type: Application
    Filed: March 5, 2018
    Publication date: October 4, 2018
    Inventors: Heng PAN, Matthew Scott ROGERS, Aaron Muir HUNTER, Stephen MOFFATT
  • Patent number: 9909925
    Abstract: Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.
    Type: Grant
    Filed: November 8, 2012
    Date of Patent: March 6, 2018
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Heng Pan, Matthew Scott Rogers, Aaron Muir Hunter, Stephen Moffatt
  • Patent number: 9809881
    Abstract: Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion production using one plasma source, and a second plasma source may be used to provide additional radicals. In one embodiment, a low pressure plasma is generated in a processing region having the substrate positioned therein, and a high pressure plasma is generated in separate region. Radicals from the high pressure plasma are injected into the processing region having the low pressure plasma, thus, altering the natural distribution of radicals to ions at a given operating pressure.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: November 7, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Matthew Scott Rogers, Zhong Qiang Hua, Christopher S. Olsen
  • Publication number: 20170316930
    Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.
    Type: Application
    Filed: July 14, 2017
    Publication date: November 2, 2017
    Inventors: HENG PAN, MATTHEW SCOTT ROGERS, CHRISTOPHER S. OLSEN
  • Patent number: 9728401
    Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.
    Type: Grant
    Filed: March 12, 2014
    Date of Patent: August 8, 2017
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Heng Pan, Matthew Scott Rogers, Christopher S. Olsen
  • Publication number: 20160300712
    Abstract: Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.
    Type: Application
    Filed: June 15, 2016
    Publication date: October 13, 2016
    Inventors: Heng PAN, Matthew Scott ROGERS, Agus S. TJANDRA, Christopher S. OLSEN
  • Patent number: 9054038
    Abstract: The present invention generally relates to a floating gate structure and method of forming the same. The floating gate structure has an upper portion which is wider than a middle portion of the floating gate structure. The upper portion may have a flared, rounded or bulbous shape instead of being pointed or having sharp corners. The reduction in pointed or sharp features of the upper portion reduces the electric field intensity near the upper portion, which decreases current leakage through the interpoly dielectric. The method includes forming a nitride cap on the upper surface of the floating gate structure to assist in shaping the floating gate. The floating gate is then formed using multiple selective oxidation and etching processes.
    Type: Grant
    Filed: July 28, 2011
    Date of Patent: June 9, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Matthew Scott Rogers, Po-Ta Chen, Jing Tang
  • Patent number: 9023700
    Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
    Type: Grant
    Filed: June 9, 2014
    Date of Patent: May 5, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Udayan Ganguly, Theresa Kramer Guarini, Matthew Scott Rogers, Yoshitaka Yokota, Johanes S. Swenberg, Malcolm J. Bevan
  • Patent number: 9012336
    Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.
    Type: Grant
    Filed: April 8, 2013
    Date of Patent: April 21, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Heng Pan, Matthew Scott Rogers, Johanes F. Swenberg, Christopher S. Olsen, Wei Liu, David Chu, Malcom J. Bevan
  • Publication number: 20140349491
    Abstract: Methods for improving selective oxidation of polysilicon against silicon nitride in a process chamber are provided herein. In some embodiments, a method of selectively oxidizing a substrate disposed within a process chamber includes exposing a substrate having an exposed polysilicon layer and an exposed silicon nitride layer to a hydrogen-containing gas; heating the substrate to a process temperature of at least about 850 degrees Celsius; adding an oxygen containing gas to the process chamber while maintaining the substrate at the process temperature to create a mixture of the hydrogen-containing gas and the oxygen-containing gas; and exposing the substrate to the mixture while at the process temperature to selectively form an oxide layer atop the polysilicon layer substantially without forming an oxide layer atop the silicon nitride layer.
    Type: Application
    Filed: May 19, 2014
    Publication date: November 27, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: AGUS SOFIAN TJANDRA, ROGER BENSON TSAI, MATTHEW SCOTT ROGERS
  • Publication number: 20140342543
    Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
    Type: Application
    Filed: June 9, 2014
    Publication date: November 20, 2014
    Inventors: Udayan GANGULY, Theresa Kramer GUARINI, Matthew Scott ROGERS, Yoshitaka YOKOTA, Johanes S. SWENBERG, Malcolm J. BEVAN
  • Publication number: 20140302686
    Abstract: Disclosed are apparatus and methods for processing a substrate. The substrate having a feature with a layer thereon is exposed to an inductively coupled plasma which forms a substantially conformal layer.
    Type: Application
    Filed: April 8, 2013
    Publication date: October 9, 2014
    Inventors: Heng Pan, Matthew Scott Rogers, Johanes F. Swenberg, Christopher S. Olsen, Wei Liu, David Chu, Malcolm J. Bevan
  • Publication number: 20140273539
    Abstract: Embodiments of methods for treating dielectric layers are provided herein. In some embodiments, a method of treating a dielectric layer disposed on a substrate supported in a process chamber includes: (a) exposing the dielectric layer to an active radical species formed in a plasma for a first period of time; (b) heating the dielectric layer to a peak temperature of about 900 degrees Celsius to about 1200 degrees Celsius; and (c) maintaining the peak temperature for a second period of time of about 1 second to about 20 seconds.
    Type: Application
    Filed: March 12, 2014
    Publication date: September 18, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: HENG PAN, MATTHEW SCOTT ROGERS, CHRISTOPHER S. OLSEN
  • Patent number: 8748259
    Abstract: Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.
    Type: Grant
    Filed: February 23, 2011
    Date of Patent: June 10, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Udayan Ganguly, Theresa Kramer Guarini, Matthew Scott Rogers, Yoshitaka Yokota, Johanes S. Swenberg, Malcolm J. Bevan
  • Publication number: 20140034632
    Abstract: Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800° C., flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.
    Type: Application
    Filed: April 24, 2013
    Publication date: February 6, 2014
    Inventors: Heng PAN, Matthew Scott ROGER, Agus S. TJANDRA, Christopher S. OLSEN
  • Patent number: 8524589
    Abstract: A method of forming a semiconductor device is disclosed. Nitrogen layers of an IPD stack are deposited using silane and a nitrogen plasma to yield a nitride layer plasma treated through its entire thickness. In addition to nitriding the bottom nitride layer of the stack, the middle nitride layer may also be nitrided. Depositing silicon from silane in a nitrogen plasma may be accomplished using high density plasma, ALD, or remote plasma processes. Elevated temperature may be used during deposition to reduce residual hydrogen in the deposited layer.
    Type: Grant
    Filed: January 16, 2012
    Date of Patent: September 3, 2013
    Assignee: Applied Materials, Inc.
    Inventor: Matthew Scott Rogers
  • Patent number: D854078
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: July 16, 2019
    Assignee: Lexmark International, Inc.
    Inventors: James Daniel Anderson, Jr., Brian Scott Carpenter, Masahito Cho, Jason Paul Hale, Kyle Bradley Martin, Robert Watson McAlpine, Jeremy Keith Payne, Thomas Eugene Pangburn, Matthew Lee Rogers, Edward Lynn Triplett