Abstract: An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.

Abstract: An electromagnetic radiation detector pixel includes a set of epitaxial layers and a lens. The set of epitaxial layers defines an electromagnetic radiation absorber. The lens is directly bonded to the set of epitaxial layers.

Abstract: An electromagnetic radiation detectors includes anti-reflective epitaxial structures incorporated into an epitaxial stack of the electromagnetic radiation detector. An anti-reflective structures as described herein are grown between (and thereby connect) two lattice-matched epitaxial layers that have different refractive indices. The anti-reflective structure reduces Fresnel reflections that would otherwise occur if the two epitaxial layers were directly connected.

Abstract: A photodetector may include a substrate having a larger lattice constant than an absorber layer. A reverse graded set of buffer layers may provide lattice matching between the substrate and the absorber layer. The substrate may comprise indium arsenide (InAs). The absorber layer may comprise one of indium gallium arsenide (InxGa1-xAs), indium arsenide phosphide (InAsxP1-x), and indium aluminum arsenide (InxAl1-xAs).

Abstract: An electromagnetic radiation detector pixel includes a set of epitaxial layers and a lens. The set of epitaxial layers defines an electromagnetic radiation absorber. The lens is directly bonded to the set of epitaxial layers.

Abstract: An electromagnetic radiation detector includes a PN junction between two group III-V semiconductor materials. The PN junction is defined by in-situ doping of the layers to improve the quality of the junction and the performance of the electromagnetic radiation detector.

Abstract: An electromagnetic radiation detector includes one or more dark current isolation regions provided to position one or more PN junctions formed in the device away from areas that may exacerbate dark current when a depletion region is present.

Abstract: An electromagnetic radiation detector pixel includes a set of epitaxial layers and a lens. The set of epitaxial layers defines an electromagnetic radiation absorber. The lens is directly bonded to the set of epitaxial layers.

Abstract: An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber.