Abstract: A substrate support has a support structure and a coating on the support structure having a carbon-hydrogen network. The coating has a contact surface having a coefficient of friction of less than about 0.3 and a hardness of at least about 8 GPa. The contact surface of the coating is capable of reducing abrasion and contamination of a substrate that contacts the contact surface. In one version, the support structure has a dielectric covering an electrode. A plurality of mesas on the dielectric have a coating with the contact surface thereon.

Abstract: First of all, a semiconductor substrate that has a dielectric layer thereon is provided. Then a liner layer is deposited on the dielectric layer. Next, perform a heating process to rise the temperature of the semiconductor substrate, the dielectric layer and the liner layer until a predetermined temperature. Afterward, keep the predetermined temperature, and then a metal conducting layer is deposited on the liner layer by way of using the in-situ method at the predetermined temperature. Subsequently, terminate the heating process, and then an anti-reflection coating (ARC) layer is formed on the metal conducting layer by way of using the in-situ method.

Abstract: An apparatus for redirecting energy applied to a susceptor of a substrate process chamber. Specifically, a shield comprising one or more reflector members is disposed below said susceptor whereby thermal energy radiated from a backside of said susceptor is reflected back to the susceptor. The apparatus comprises a bracket member attached to the reflector members and a pedestal assembly disposed below said susceptor. The reflector members are fabricated from a low emissivity material such as stainless steel (which can be polished to a highly reflective condition). Also, the first and second reflector members can be annealed.