Abstract: An integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion of especial utility in conjunction with magnetoresistive random access memory (MRAM) and other devices requiring magnetic shielding.

Abstract: A method of incorporating active error correction inside a memory device is used, whereby memory scrub cycles can be completely hidden from an end user. The method simplifies the design of the memory interface and simplifies the data integrity management unit for the end user. An arbitration unit is implemented to allow concurrent processing of primary (user) and secondary (scrub) requests. The arbitration unit is location aware in context to the primary interface and is responsible for eliminating overlapping memory requests.

Abstract: A method of incorporating active error correction inside a memory device is used, whereby memory scrub cycles can be completely hidden from an end user. The method simplifies the design of the memory interface and simplifies the data integrity management unit for the end user. An arbitration unit is implemented to allow concurrent processing of primary (user) and secondary (scrub) requests. The arbitration unit is location aware in context to the primary interface and is responsible for eliminating overlapping memory requests.

Abstract: An integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion of especial utility in conjunction with magnetoresistive random access memory (MRAM) and other devices requiring magnetic shielding.

Abstract: An integrated circuit shielding technique utilizing stacked die technology incorporating top and bottom nickel-iron alloy shields having a low coefficient of thermal expansion of especial utility in conjunction with magnetoresistive random access memory (MRAM) and other devices requiring magnetic shielding.

Abstract: A data memory is organized as a logical matrix having multiple virtual data words. Along with the physical representation of the data as being associated with physical memory cells, other virtual data words and their virtual check bits are formed that intersect (logically) with the real data word in a multi-dimensional array. Each of these virtual words can possess errors that can be quickly corrected using independent EDAC methodology. The validity of the virtual word can be used to verify the validity of a single bit in the real word thus correcting multiple bit errors.

Abstract: A data memory is organized as a logical matrix having multiple virtual data words. Along with the physical representation of the data as being associated with physical memory cells, other virtual data words and their virtual check bits are formed that intersect (logically) with the real data word in a multi-dimensional array. Each of these virtual words can possess errors that can be quickly corrected using independent EDAC methodology. The validity of the virtual word can be used to verify the validity of a single bit in the real word thus correcting multiple bit errors.

Abstract: A simple voltage detection circuit has few circuit elements, but provides a voltage output that is substantially temperature insensitive. The voltage detection circuit includes a diode-connected transistor, a cascode-connected transistor, as well as first and second resistors coupled between ground and a ramped power supply voltage. The diode-connected transistor exhibits a negative temperature coefficient. The on resistance of the cascode-connected transistor increases with temperature and thus the voltage dropped across the cascode-connected transistor also increases with temperature. By correctly sizing the cascode-connected device, the negative and positive temperature coefficients of the diode-connected and cascode-connected devices can be substantially cancelled out.

Abstract: A delay line appropriate for use in a POR circuit or other integrated circuit in a space environment combines three separate circuit techniques to improve performance without unnecessarily increasing circuit area or adding to manufacturing costs when compared to a simple inverter delay line. The delay line of the present invention uses the selective placement of capacitors throughout the delay line, one-sided current starving, and the incorporation of one-sided Schmitt trigger circuits. Performance of the delay line is substantially immune to SEGR events (“Single Event Gate Rupture”) and SET events (“Single Event Transients”). Spurious signals produced by SEGR and SET events are quickly and substantially attenuated.

Abstract: A radiation-hardened logic circuit prevents SET-induced transient pulses from propagating through the circuit, using two identical logic paths. The outputs of the two logic paths are fed into an exclusive-OR gate, which controls gating circuitry. The gating circuitry can be a controlled pass-gate circuit and a data latch, an adjustable threshold comparator, or two controlled latches. Transient pulse suppression is achieved with less circuitry and expense than is found in TMR circuits.

Abstract: A radiation-hardened logic circuit prevents SET-induced transient pulses from propagating through the circuit, using two identical logic paths. The outputs of the two logic paths are fed into an exclusive-OR gate, which controls gating circuitry. The gating circuitry can be a controlled pass-gate circuit and a data latch, an adjustable threshold comparator, or two controlled latches. Transient pulse suppression is achieved with less circuitry and expense than is found in TMR circuits.

Abstract: A delay line appropriate for use in a POR circuit or other integrated circuit in a space environment combines three separate circuit techniques to improve performance without unnecessarily increasing circuit area or adding to manufacturing costs when compared to a simple inverter delay line. The delay line of the present invention uses the selective placement of capacitors throughout the delay line, one-sided current starving, and the incorporation of one-sided Schmitt trigger circuits. Performance of the delay line is substantially immune to SEGR events (“Single Event Gate Rupture”) and SET events (“Single Event Transients”). Spurious signals produced by SEGR and SET events are quickly and substantially attenuated.

Abstract: A simple voltage detection circuit has few circuit elements, but provides a voltage output that is substantially temperature insensitive. The voltage detection circuit includes a diode-connected transistor, a cascode-connected transistor, as well as first and second resistors coupled between ground and a ramped power supply voltage. The diode-connected transistor exhibits a negative temperature coefficient. The on resistance of the cascode-connected transistor increases with temperature and thus the voltage dropped across the cascode-connected transistor also increases with temperature. By correctly sizing the cascode-connected device, the negative and positive temperature coefficients of the diode-connected and cascode-connected devices can be substantially cancelled out.

Abstract: An integrated inductor is formed on an integrated circuit or other substrate. The inductor is formed of a stack of almost totally enclosed rings of conductive material in which each ring has a single gap. Vias connect adjacent rings on opposite sides of their gaps so as to form a coil shaped structure. The inductor has applications in filtering, in an oscillator, in an antenna, combined with an active detection circuit, combined with an electron source, in a microelectromechanical systems or MEMS, or the like. The inductor may be formed in a vertical orientation or in a horizontal orientation. Chemical mechanical polishing may be used for planarizing layers.

Abstract: An integrated inductor is formed on an integrated circuit or other substrate. The inductor is formed of a stack of almost totally enclosed rings of conductive material in which each ring has a single gap. Vias connect adjacent rings on opposite sides of their gaps so as to form a coil shaped structure. The inductor has applications in filtering, in an oscillator, in an antenna, combined with an active detection circuit, combined with an electron source, in a microelectromechanial systems or MEMS, or the like. The inductor may be formed in a vertical orientation or in a horizontal orientation. Chemical mechanical polishing may be used for planarizing layers.

Abstract: An integrated inductor is formed on an integrated circuit or other substrate. The inductor is formed of a stack of almost totally enclosed rings of conductive material in which each ring has a single gap. Vias connect adjacent rings on opposite sides of their gaps so as to form a coil shaped structure. The inductor has applications in filtering, in an oscillator, in an antenna, combined with an active detection circuit, combined with an electron source, in a microelectromechanical systems or MEMS, or the like. The inductor may be formed in a vertical orientation or in a horizontal orientation. Chemical mechanical polishing may be used for planarizing layers.