Abstract: A semiconductor component is formed using the following processes: (a) forming a first dielectric layer over the semiconductor substrate; (b) forming a base electrode for the bipolar transistor over the dielectric layer; (c) forming an oxide nitride structure over the base electrode; (d) forming a first spacer adjacent to the oxide nitride structure and the base electrode; (e) removing a top layer of the oxide nitride structure; (f) removing a first portion of the dielectric layer; (g) forming an epitaxial layer over the semiconductor substrate; (h) forming a second spacer over the epitaxial layer; and (i) forming an emitter electrode over the epitaxial layer and adjacent to the second spacer.

Abstract: A semiconductor component is formed using the following processes: (a) forming a first dielectric layer over the semiconductor substrate; (b) forming a base electrode for the bipolar transistor over the dielectric layer; (c) forming an oxide nitride structure over the base electrode; (d) forming a first spacer adjacent to the oxide nitride structure and the base electrode; (e) removing a top layer of the oxide nitride structure; (f) removing a first portion of the dielectric layer; (g) forming an epitaxial layer over the semiconductor substrate; (h) forming a second spacer over the epitaxial layer; and (i) forming an emitter electrode over the epitaxial layer and adjacent to the second spacer.

Abstract: A method is provided for forming bipolar (103) and MOS (105) semiconductor devices in a common substrate (46), comprising, forming a combination comprising an MOS device (105) in a first region (44) of the substrate (46) and a portion (50) of a collector region (82, 64, 62, 50) of the bipolar device (103) in a second portion (42) of the substrate (46), covering the MOS device (105) with differentially etchable dielectric layers (56, 58) and the combination with an etch-stop layer (68), completing formation of the bipolar device (103) without completely removing the etch-stop layer (68) from the MOS device (105), anisotropically etching the differentially etchable layers (56, 58) to form a gate sidewall (56?, 58?) of the MOS device (105), and applying contact electrodes (98) to the MOS (105) and bipolar (103) devices.

Abstract: A semiconductor component is formed using the following processes: (a) forming a first dielectric layer over the semiconductor substrate; (b) forming a base electrode for the bipolar transistor over the dielectric layer; (c) forming an oxide nitride structure over the base electrode; (d) forming a first spacer adjacent to the oxide nitride structure and the base electrode; (e) removing a top layer of the oxide nitride structure; (f) removing a first portion of the dielectric layer; (g) forming an epitaxial layer over the semiconductor substrate; (h) forming a second spacer over the epitaxial layer; and (i) forming an emitter electrode over the epitaxial layer and adjacent to the second spacer.

Abstract: A bipolar transistor (100) is manufactured using the following processes: (a) forming a base electrode layer (129) as a portion of a base electrode over a semiconductor substrate (110); (b) forming a first portion of an emitter electrode (154) over the base electrode layer; (c) forming a mask layer (280) over a first portion of the base electrode layer, a portion of the first portion of the emitter electrode and a portion of the semiconductor substrate; and (d) implanting a dopant into a second portion of the base electrode layer after forming the emitter electrode after forming the mask layer.

Abstract: A bipolar transistor (100) is manufactured using the following processes: (a) forming a base electrode layer (129) as a portion of a base electrode over a semiconductor substrate (110); (b) forming a first portion of an emitter electrode (154) over the base electrode layer; (c) forming a mask layer (280) over a first portion of the base electrode layer, a portion of the first portion of the emitter electrode and a portion of the semiconductor substrate; and (d) implanting a dopant into a second portion of the base electrode layer after forming the emitter electrode after forming the mask layer.

Abstract: A semiconductor component is formed using the following processes: (a) forming a first dielectric layer over the semiconductor substrate; (b) forming a base electrode for the bipolar transistor over the dielectric layer; (c) forming an oxide nitride structure over the base electrode; (d) forming a first spacer adjacent to the oxide nitride structure and the base electrode; (e) removing a top layer of the oxide nitride structure; (f) removing a first portion of the dielectric layer; (g) forming an epitaxial layer over the semiconductor substrate; (h) forming a second spacer over the epitaxial layer; and (i) forming an emitter electrode over the epitaxial layer and adjacent to the second spacer.

Abstract: A method is provided for forming bipolar (103) and MOS (105) semiconductor devices in a common substrate (46), comprising, forming a combination comprising an MOS device (105) in a first region (44) of the substrate (46) and a portion (50) of a collector region (82, 64, 62, 50) of the bipolar device (103) in a second portion (42) of the substrate (46), covering the MOS device (105) with differentially etchable dielectric layers (56, 58) and the combination with an etch-stop layer (68), completing formation of the bipolar device (103) without completely removing the etch-stop layer (68) from the MOS device (105), anisotropically etching the differentially etchable layers (56, 58) to form a gate sidewall (56?, 58?) of the MOS device (105), and applying contact electrodes (98) to the MOS (105) and bipolar (103) devices.