Patents by Inventor Matthias Baenninger

Matthias Baenninger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9209031
    Abstract: A fabrication process is provided for a 3D stacked non-volatile memory device which provides a source contact to memory holes at a bottom of a stack. The stack includes alternating control gate layers and dielectric layers on a substrate, and memory holes are etched through the stack. The process avoids the need to etch through films at the bottom of the memory hole. Instead, a path is formed from the bottom of the memory hole to the top of the stack. The path includes a horizontal portion using a voided trench in a substrate dielectric, and a passageway etched in the stack. The memory films, a channel material and a dielectric material are deposited throughout the interior surfaces of the void and the memory holes concurrently. The path is filled with metal to form a continuous, low resistance conductive path.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: December 8, 2015
    Assignee: SanDisk Technologies Inc.
    Inventors: Matthias Baenninger, Johann Alsmeier, Akira Matsudaira, Jayavel Pachamuthu
  • Publication number: 20150255481
    Abstract: A fabrication process is provided for a 3D stacked non-volatile memory device which provides a source contact to memory holes at a bottom of a stack. The stack includes alternating control gate layers and dielectric layers on a substrate, and memory holes are etched through the stack. The process avoids the need to etch through films at the bottom of the memory hole. Instead, a path is formed from the bottom of the memory hole to the top of the stack. The path includes a horizontal portion using a voided trench in a substrate dielectric, and a passageway etched in the stack. The memory films, a channel material and a dielectric material are deposited throughout the interior surfaces of the void and the memory holes concurrently. The path is filled with metal to form a continuous, low resistance conductive path.
    Type: Application
    Filed: March 7, 2014
    Publication date: September 10, 2015
    Applicant: SanDisk Technologies Inc.
    Inventors: Matthias Baenninger, Johann Alsmeier, Akira Matsudaira, Jayavel Pachamuthu