Abstract: Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion includes a first plurality of channels and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.

Abstract: Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion includes a first plurality of channels and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.

Abstract: The disclosure relates to a control method for controlling at least one injector valve in a fuel injection system of an internal combustion engine. An opening time of the injector valve is selected such that, in a fault situation in the fuel injection system, an opening time of the injector valve is situated in a pressure valley of a pressure oscillation prevailing in a high-pressure region of the fuel injection system.

Abstract: A dispensing device for introducing a pourable detergent in metered amounts into a treatment chamber of a program-controlled cleaning appliance includes a housing provided with a loading aperture; a carrier unit rotatably mounted in the housing and accessible via the loading aperture and which serves to replaceably receive a supply container for holding the detergent; and a housing cover providing fluid-tight closure of the loading aperture. The housing cover includes a cover member providing the fluid-tight closure of the loading aperture and a locking member movably attached to the cover member, the locking member including a plurality of locking elements, each cooperating with a respective locking finger disposed on the housing.

Abstract: A flow guide body for an aircraft includes a main body having an outer aerodynamic surface having a plurality of outlet openings, and flow control devices, each having an inlet, an interaction chamber, a first outlet and a second outlet. A first control inlet is connected to the interaction chamber at the first side of the chamber axis. The outlets are each connected to outlet openings in the aerodynamic surface. Each outlet has a control outlet. A second flow control device is arranged such that one outlet is connected with the inlet of the first flow control device. One of the control outlets of the first flow control device is connected to the first control inlet of the first flow control device, and the other of the control outlets of the first flow control device is connected to the first control inlet of the second flow control device.

Abstract: The invention relates to a preparation which is used on textile surfaces, tissues, non-crimp fabrics, knitted fabrics, fibers, non-woven fabrics and weft knitted fabrics and which demonstrates an improved resistance to abrasion. The invention also relates to the use of the preparation including on textiles, non-woven fabrics and leather articles.

Abstract: A finFET device includes a doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped or p-doped source or drain extension is disposed. The doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer. After formation of the cavity, advanced processing controls (APC) (i.e., integrated metrology) is used to determine the distance of recess, without exposing the substrate to an oxidizing environment. The isotropic etch process, the metrology, and selective epitaxial growth may be performed in the same platform.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: The present disclosure generally relates to methods of selectively forming titanium silicides on substrates. The methods are generally utilized in conjunction with contact structure integration schemes. In one embodiment, a titanium silicide material is selectively formed on a substrate as an interfacial layer on a source/drain region. The titanium silicide layer may be formed at a temperature within range of about 400 degrees Celsius to about 500 degrees Celsius.

Abstract: Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.

Abstract: A door latch for an electrical domestic appliance includes a rotary member arranged to be rotationally movable between a closing rotational position and a release rotational position and is spring-biased in the direction towards the release rotational position, a movably arranged catch that is in an arresting engagement with the rotary member when the rotary member is in the closing rotational position, and a locking assembly that includes a movable locking member movable between an unlocking position and a locking position. The arresting engagement is releasable by an overlifting rotational movement of the rotary member. The rotary member is rotationally movable between a closing rotational position and a release rotational position and is spring-biased in the direction towards the release rotational position. The locking member, when transferred from the unlocking position into the opening position, causes the arresting engagement of the catch with the rotary member to be released.

Abstract: Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: The disclosure relates to a control method for controlling at least one injector valve in a fuel injection system of an internal combustion engine. An opening time of the injector valve is selected such that, in a fault situation in the fuel injection system, an opening time of the injector valve is situated in a pressure valley of a pressure oscillation prevailing in a high-pressure region of the fuel injection system.

Abstract: The present disclosure generally relates to methods of selectively forming titanium silicides on substrates. The methods are generally utilized in conjunction with contact structure integration schemes. In one embodiment, a titanium silicide material is selectively formed on a substrate as an interfacial layer on a source/drain region. The titanium silicide layer may be formed at a temperature within range of about 400 degrees Celsius to about 500 degrees Celsius.

Abstract: Implementations of the present disclosure generally relate to one or more flow ratio controllers and one or more gas injection inserts in the semiconductor processing chamber. In one implementation, an apparatus includes a first flow ratio controller including a first plurality of flow controllers, a second flow ratio controller including a second plurality of flow controllers, and a gas injection insert including a first portion and a second portion. The first portion includes a first plurality of channels and the second portion includes a second plurality of channels. The apparatus further includes a plurality of gas lines connecting the first and second pluralities of flow controllers to the first and second pluralities of channels. One or more gas lines of the plurality of gas lines are each connected to a channel of the first plurality of channels and a channel of the second plurality of channels.

Abstract: Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.

Abstract: A fluidic actuator for influencing a flow of a surrounding fluid along a flow surface has a blowing duct for connecting to a pressurized-fluid source, and has a surface blowing opening formed in the flow surface, and a suction duct for connecting to a surface suction opening formed in the flow surface, wherein the suction duct flows into the blowing duct at an entrainment opening.

Abstract: A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.

Abstract: A domestic electrical appliance, in particular a dishwashing machine, includes a main appliance body having a product treatment chamber, a door mounted on the main appliance body so as to be pivotable about a horizontal pivot axis close to the floor for closing an access opening to the product treatment chamber and a locking device having a locking assembly arranged on the main appliance body and a closing pin arranged on the door. The locking assembly has a latch movable between a release position and a latching position where the latch engages behind the closing pin to hold the door closed and releases the closing pin to open the door. The latch performs a rotational movement along a horizontal plane as it moves between the release position and the latching position, the closing pin being oriented vertically when the door is closed.