Abstract: A method for growing beta phase of gallium oxide (?-Ga2O3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2?, C2?) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga2O3 or at the melting temperature (MT) or after complete melting of the Ga2O3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the ?-Ga2O3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2?, C2?) is maintained within the oxygen concentration range (SC).

Abstract: The invention concerns a method for the production of single crystal aluminium nitride doped with scandium and/or yttrium, with scandium and/or yttrium contents in the range 0.01 atom % to 50 atom % with respect to 100 atom % of the total quantity of the doped aluminium nitride, characterized in that in a crucible, in the presence of a gas selected from nitrogen or a noble gas, or a mixture of nitrogen and a noble gas: a doping material selected from scandium, yttrium, scandium nitride or yttrium nitride or a mixture thereof and a source material formed from aluminium nitride are sublimated and recondensed onto a seed material which is selected from aluminium nitride or aluminium nitride doped with scandium and/or yttrium.

Abstract: A method for growing beta phase of gallium oxide (?-Ga2O3) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2?, C2?) in the concentration range (SC) of 5-100 vol. % below the melting temperature (MT) of Ga2O3 or at the melting temperature (MT) or after complete melting of the Ga2O3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the ?-Ga2O3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2?, C2?) is maintained within the oxygen concentration range (SC).

Abstract: A method for cutting a single crystal having a first polar axis includes the steps of arranging the single crystal relative to a cutting tool in such a way that the first polar axis is oriented perpendicular to an intended cutting plane; arranging at least one further single crystal having a second polar axis in such a way that the first and the second polar axis are oriented substantially parallel but opposite one another; and simultaneously guiding a cutting tool through the single crystal and the at least one further single crystal along the intended cutting plane.

Abstract: An object of the present invention is to provide, even when a single crystal of a material other than AlN is used as a crystal, an AlN bulk single crystal having fewer defects and high quality, a method for producing such an AlN bulk single crystal, and a semiconductor device. A feature is to select, as a surface 1a of a hexagonal single crystal substrate serving as a seed crystal 1, a plane inclined at an angle of 10° to 80° with respect to the C-plane (FIG. 1(a)), and to grow an AlN single crystal 2 as a growth plane 2a on the surface 1a by a sublimation method (FIG. 1(b)).