Patents by Inventor Matthias Daniel

Matthias Daniel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260092392
    Abstract: A process produces a single silicon crystal doped with n-type dopant by pulling the single crystal, surrounded by a heat shield, in a reactor chamber, by the CZ method, from a melt. A solid dopant is heated in a dopant crucible of a sublimating unit outside the reactor chamber to a temperature at which a gaseous dopant is formed. The gaseous dopant is supplied through a conduit to a surface of the melt, including by: bringing a control valve, which is between the sublimating unit and the reactor chamber, into a mandated open state as soon as a pressure difference between the pressure in the sublimating unit and the pressure in the reactor chamber has grown to a predetermined value; and controlling the open state of the control valve with a setpoint pressure in the sublimating unit as command variable and the pressure difference as controlled variable of the control.
    Type: Application
    Filed: September 28, 2023
    Publication date: April 2, 2026
    Inventors: Georg Raming, Matthias Daniel, Johann-Andreas Huber
  • Patent number: 12480225
    Abstract: Silicon single crystals having an oxygen concentration of greater than 2×1017 at/cm3, a concentration of pinholes having a diameter of greater than 100 ?m of less than 1.0×10?5 l/cm3, a carbon concentration of less than 5.5×1014 at/cm3, an iron concentration of less than 5.0×109 at/cm3, a COP concentration of fewer than 1000 defects/cm3, a LPIT concentration of fewer than 1 defect/cm2 and a crystal diameter of greater than 200 mm, are produced by the Czochralski method employing a purge gas at specified pressures and flow rates.
    Type: Grant
    Filed: June 2, 2020
    Date of Patent: November 25, 2025
    Assignee: Siltronic AG
    Inventors: Sergiy Balanetskyy, Matthias Daniel
  • Publication number: 20220356601
    Abstract: Silicon single crystals having an oxygen concentration of greater than 2×1017 at/cm3, a concentration of pinholes having a diameter of greater than 100 ?m of less than 1.0×10?5 l/cm3, a carbon concentration of less than 5.5×1014 at/cm3, an iron concentration of less than 5.0×109 at/cm3, a COP concentration of fewer than 1000 defects/cm3, a LPIT concentration of fewer than 1 defect/cm2 and a crystal diameter of greater than 200 mm, are produced by the Czochralski method employing a purge gas at specified pressures and flow rates.
    Type: Application
    Filed: June 2, 2020
    Publication date: November 10, 2022
    Applicant: SILTRONIC AG
    Inventors: Sergiy BALANETSKYY, Matthias DANIEL
  • Patent number: 11390962
    Abstract: Single crystal silicon with <100> orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20° and not greater than 30° in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 ?m.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: July 19, 2022
    Assignee: SILTRONIC AG
    Inventors: Georg Raming, Ludwig Stockmeier, Jochen Friedrich, Matthias Daniel, Alfred Miller
  • Publication number: 20200270764
    Abstract: Single crystal silicon with <100> orientation is doped with n-type dopant and comprises a starting cone, a cylindrical portion and an end cone, a crystal angle being not less than 20° and not greater than 30° in a middle portion of the starting cone, the length of which is not less than 50% of a length of the starting cone, and edge facets extending from a periphery of the single crystal into the single crystal, the edge facets in the starting cone and in the cylindrical portion of the single crystal in each case having a length which is not more than 700 ?m.
    Type: Application
    Filed: August 28, 2018
    Publication date: August 27, 2020
    Applicant: SILTRONIC AG
    Inventors: Georg RAMING, Ludwig STOCKMEIER, Jochen FRIEDRICH, Matthias DANIEL, Alfred MILLER
  • Patent number: 10092704
    Abstract: The present invention relates to a medicament delivery device. The medicament delivery device may include an operation member configured to act on a medicament container for expelling a medicament. The device may configured to hold the operation member in a pre-tensioned state. The device may include an activation member configured to interact with the operation member to release it from the pre-tensioned state. The device may further comprise feedback. For example, the feedback may include generating an audible and/or tactile and/or visual signal indicating that the medicament has been completely expelled.
    Type: Grant
    Filed: November 17, 2015
    Date of Patent: October 9, 2018
    Assignee: SHL Group AB
    Inventor: Matthias Daniel
  • Publication number: 20160067407
    Abstract: The present invention relates to a medicament delivery device comprising a drive means configured to act on a medicament container for expelling a medicament; a holding means configured to hold said drive means in a pre-tensioned state; an activation means configured to interact with said holding means for releasing said drive means from the pre-tensioned state; wherein the device further comprises feedback means configured to interact both with said holding means and with said drive means for generating an audible and/or tactile and/or visual signal indicating that the medicament has been completely expelled.
    Type: Application
    Filed: November 17, 2015
    Publication date: March 10, 2016
    Inventor: Matthias Daniel