Patents by Inventor Matthias Förster

Matthias Förster has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for fabricating a trench capacitor
    Patent number: 6455369
    Abstract: A method for fabricating a trench capacitor, that includes steps of: providing a silicon substrate; forming a trench, having a lower region and a surface, in the silicon substrate; and forming a doped layer in the silicon substrate in the lower region of the trench. In addition, a roughened silicon layer that has silicon grains with a diameter ranging from essentially 10 to 100 nm is produced in the lower region of the trench. A dielectric intermediate layer is applied on the roughened silicon layer, and the trench is filled with a doped layer.
    Type: Grant
    Filed: August 20, 2001
    Date of Patent: September 24, 2002
    Assignee: Infineon Technologies AG
    Inventors: Matthias Förster, Jörn Lützen, Martin Gutsche, Anja Morgenschweis