Abstract: The photo detector (100, 300, 500, 600, 700, 900) comprises a photo transistor (102, 902). The photo transistor has a light sensitive region (112, 910) for controlling the transistor action of the photo transistor. The photo detector further comprises a dielectric layer (118). The dielectric layer is in contact with the photo transistor. The photo detector further comprises a grating pattern (114, 604, 914, 1010) in contact with the dielectric layer. The grating layer and the dielectric layer are adapted for focusing electromagnetic radiation in the light sensitive region.

Abstract: A photodiode device including a photosensitive diffusion junction within a single layer. The photodiode device further includes a resonant grating located within the single layer. The photosensitive diffusion junction is located within the resonant grating.

Abstract: A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength ? and is incident upon a semiconductor structure of the device at an angle of incidence (?i). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence ?i. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of ?/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidence ?i.

Abstract: The photo detector (100, 300, 500, 600, 700, 900) comprises a photo transistor (102, 902). The photo transistor has a light sensitive region (112, 910) for controlling the transistor action of the photo transistor. The photo detector further comprises a dielectric layer (118). The dielectric layer is in contact with the photo transistor. The photo detector further comprises a grating pattern (114, 604, 914, 1010) in contact with the dielectric layer. The grating layer and the dielectric layer are adapted for focusing electromagnetic radiation in the light sensitive region.

Abstract: A multi-junction opto-electronic device including a stack of wavelength selective absorption layers is proposed. The absorption layers include each a first layer with a grating of a specific pitch defining the wavelength of the incident light to be absorbed within a subjacent second electrically active layer itself on a third electrically inactive layer. The second electrically active layer within the different absorption layers is in electrical connection with lateral contacts to extract the electrical charge carriers generated by the absorbed incident light within the active layer. The grating within the first layer of the absorption layers is defined by periodic stripes of specific width depending on the wavelength to be absorbed by the respective absorption layers. The period of the stripes alignment is defined by the pitch of the grating. Advantageously, ordinary silicon technology can be used.

Abstract: A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength ? and is incident upon a semiconductor structure of the device at an angle of incidence (?i). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence ?i. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of ?/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidence ?i.

Abstract: A photodiode device including a photosensitive diffusion junction within a single layer. The photodiode device further includes a resonant grating located within the single layer. The photosensitive diffusion junction is located within the resonant grating.

Abstract: A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength ? and is incident upon a semiconductor structure of the device at an angle of incidence (?i). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence ?i. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of ?/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidences ?i.

Abstract: A program product, a translation lookaside buffer and a related method for operating the TLB is provided.

Abstract: A system and associated method for distributing signals with efficiency over a microprocessor. A performance monitoring unit (PMU) sends configuration signals to a unit to monitor an event occurring on the unit. The unit is attached to a configuration bus and an event bus that are daisy-chained from PMU to other units in the microprocessor. The configuration bus transmits configuration signals from the PMU to the unit to set the unit to report the event. The unit sends event signals to the PMU through the event bus. The unit is configured upon receiving configuration signals comprising a base address of a bus ramp of the unit. A number of units and a number of events for monitoring is flexibly selected by adjusting a length of bit fields within configuration signals.

Abstract: A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.

Abstract: A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.

Abstract: A system and associated method for distributing signals with efficiency over a microprocessor. A performance monitoring unit (PMU) sends configuration signals to a unit to monitor an event occurring on the unit. The unit is attached to a configuration bus and an event bus that are daisy-chained from PMU to other units in the microprocessor. The configuration bus transmits configuration signals from the PMU to the unit to set the unit to report the event. The unit sends event signals to the PMU through the event bus. The unit is configured upon receiving configuration signals comprising a base address of a bus ramp of the unit. A number of units and a number of events for monitoring is flexibly selected by adjusting a length of bit fields within configuration signals.

Abstract: A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength ? and is incident upon a semiconductor structure of the device at an angle of incidence (?i). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence ?i. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of ?/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidences ?i.

Abstract: A multi-junction opto-electronic device including a stack of wavelength selective absorption layers is proposed. The absorption layers include each a first layer with a grating of a specific pitch defining the wavelength of the incident light to be absorbed within a subjacent second electrically active layer itself on a third electrically inactive layer. The second electrically active layer within the different absorption layers is in electrical connection with lateral contacts to extract the electrical charge carriers generated by the absorbed incident light within the active layer. The grating within the first layer of the absorption layers is defined by periodic stripes of specific width depending on the wavelength to be absorbed by the respective absorption layers. The period of the stripes alignment is defined by the pitch of the grating. Advantageously, ordinary silicon technology can be used.

Abstract: A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.

Abstract: A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.

Abstract: A program product, a translation lookaside buffer and a related method for operating the TLB is provided.