Abstract: The arrangement comprises a hot or cool plate (12) that has a substantially planar surface for accommodating the semiconductor substrate and for transmitting heat between the hot or cool plate and the semiconductor substrate, a source (10) of heat or cold that is connected to the hot or cool plate (12) for the purpose of heating or cooling, a device (25) for depositing or lifting the semiconductor substrate (8) onto/from the surface of the hot or cool plate (12). A light source (200) can be used to generate a focused light beam (80), preferably a laser beam, which is detected by a detector (100) with at least one sensor (110–140) after reflection by a wafer (8) deposited on the hot or cool plate (12). A control unit that is connected to the detector (100) for the purpose of evaluating a position of the reflected light beam determines a possible deposition error by comparing the position with one of a wafer (8) deposited with its entire surface on the hot or cool plate (12).

Abstract: The arrangement comprises a hot or cool plate (12) that has a substantially planar surface for accommodating the semiconductor substrate and for transmitting heat between the hot or cool plate and the semiconductor substrate, a source (10) of heat or cold that is connected to the hot or cool plate (12) for the purpose of heating or cooling, a device (25) for depositing or lifting the semiconductor substrate (8) onto/from the surface of the hot or cool plate (12). A light source (200) can be used to generate a focused light beam (80), preferably a laser beam, which is detected by a detector (100) with at least one sensor (110-140) after reflection by a wafer (8) deposited on the hot or cool plate (12). A control unit that is connected to the detector (100) for the purpose of evaluating a position of the reflected light beam determines a possible deposition error by comparing the position with one of a wafer (8) deposited with its entire surface on the hot or cool plate (12).