Abstract: A semiconductor package is disclosed. The semiconductor package includes an electrically conducting carrier having a mounting surface, a first level first semiconductor power device having a first load electrode mounted over the mounting surface of the electrically conducting carrier and having a second load electrode opposite the first electrode. The package further includes a first level second semiconductor power device. A first connection element has a first surface connected to the second load electrode of the first level first semiconductor power device. A second connection element has a first surface connected to the second load electrode of the first level second semiconductor power device. The package includes a second level first semiconductor power device and a second level second semiconductor power device.

Abstract: A method for testing an electronic module having a memory cell device includes writing an information item to the memory cell device at a first clock frequency and then reading-out the information item from the memory cell device at a second clock frequency. The read out information item is reflected at a reflection point and is written back to the memory cell device at the second clock frequency. The reflected information unit is then read-out from the memory cell device with the first clock frequency.

Abstract: In a configuration for checking an address generator, a memory apparatus is configured such that it can store values of address signals that are present on lines of an address bus. The stored values can then be output to at least one access point where the values are provided for further evaluation.

Abstract: In a configuration for checking an address generator, a memory apparatus is configured such that it can store values of address signals that are present on lines of an address bus. The stored values can then be output to at least one access point where the values are provided for further evaluation.

Abstract: A method for testing an electronic module having a memory cell device includes writing an information item to the memory cell device at a first clock frequency and then reading-out the information item from the memory cell device at a second clock frequency. The read out information item is reflected at a reflection point and is written back to the memory cell device at the second clock frequency. The reflected information unit is then read-out from the memory cell device wiht the first clock frequency.