Patents by Inventor Matthias Hermann Peri

Matthias Hermann Peri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9184281
    Abstract: Producing a vertical semiconductor device includes: providing a semiconductor wafer including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type forming a first pn-junction with the first layer, and a third semiconductor layer of the first conductivity type forming a second pn-junction with the second layer and extending to a main surface of the wafer; forming a hard mask on the main surface that includes hard mask portions spaced apart from each other by first openings; using the hard mask to etch deep trenches from the main surface into the first layer so that mesa regions covered at the main surface by respective hard mask portions are formed between adjacent trenches; filling the trenches and first openings of the hard mask; and etching the hard mask to form second openings in the hard mask at the main surface of the mesas.
    Type: Grant
    Filed: October 30, 2013
    Date of Patent: November 10, 2015
    Assignee: Infineon Technologies AG
    Inventors: Peter Brandl, Matthias Hermann Peri
  • Publication number: 20150115356
    Abstract: Producing a vertical semiconductor device includes: providing a semiconductor wafer including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type forming a first pn-junction with the first layer, and a third semiconductor layer of the first conductivity type forming a second pn-junction with the second layer and extending to a main surface of the wafer; forming a hard mask on the main surface that includes hard mask portions spaced apart from each other by first openings; using the hard mask to etch deep trenches from the main surface into the first layer so that mesa regions covered at the main surface by respective hard mask portions are formed between adjacent trenches; filling the trenches and first openings of the hard mask; and etching the hard mask to form second openings in the hard mask at the main surface of the mesas.
    Type: Application
    Filed: October 30, 2013
    Publication date: April 30, 2015
    Inventors: Peter Brandl, Matthias Hermann Peri