Abstract: A method and apparatus for operating a multi-gas sensor are disclosed. In an embodiment, a method includes providing at least one calibration input comprising sensor design data of the multi-gas sensor, which varies dependent on production process parameters, and/or sensor production process parameter data of the multi-gas sensor, and/or measurement results of the multi-gas sensor captured when the multi-gas sensor is exposed to one of the gases or a gas mixture to be detected and/or sensed by the multi-gas sensor; providing a trained neural network including an input layer with K input nodes, an output layer with L output nodes and at least one hidden layer; storing each calibration input as a fixed input to a corresponding input node of the trained neural network; and providing a multi-gas sensor output for at least a part of the gases to be detected and/or sensed by the multi-gas sensor dependent on the trained neural network and actual measured sensor values from the sensor elements.

Abstract: A sensor component and a mobile communication device including a sensor component are disclosed. In an embodiment a sensor component includes a subcomponent configured to sense a gas level including a resistive heater and a gas sensitive element disposed on the resistive heater; a package enclosing a cavity and accommodating the subcomponent, the package including a first opening in a position facing the gas sensitive element of the subcomponent and a second opening configured to allow a flow of gas to enter the package through the first opening and exit the package through the second opening; and an evaluation circuit configured to generate an output signal indicative of a speed of the flow of gas in response to electrical power to be supplied to the resistive heater.

Abstract: A fluid sensor comprises a sensor material configured to come into contact at a surface region of same with a fluid and to obtain a first temporal change of a resistance value of the sensor material on the basis of the contact in a first sensor configuration and to obtain a second temporal change of the resistance value of the sensor material on the basis of the contact in a second sensor configuration. The fluid sensor comprises an output element configured to provide a sensor signal on the basis of the first and second temporal change of the resistance value.

Abstract: A sensor component and a mobile communication device including a sensor component are disclosed. In an embodiment a sensor component includes a subcomponent configured to sense a gas level including a resistive heater and a gas sensitive element disposed on the resistive heater; a package enclosing a cavity and accommodating the subcomponent, the package including a first opening in a position facing the gas sensitive element of the subcomponent and a second opening configured to allow a flow of gas to enter the package through the first opening and exit the package through the second opening; and an evaluation circuit configured to generate an output signal indicative of a speed of the flow of gas in response to electrical power to be supplied to the resistive heater.

Abstract: A method and apparatus for operating a multi-gas sensor are disclosed. In an embodiment, a method includes providing at least one calibration input comprising sensor design data of the multi-gas sensor, which varies dependent on production process parameters, and/or sensor production process parameter data of the multi-gas sensor, and/or measurement results of the multi-gas sensor captured when the multi-gas sensor is exposed to one of the gases or a gas mixture to be detected and/or sensed by the multi-gas sensor; providing a trained neural network including an input layer with K input nodes, an output layer with L output nodes and at least one hidden layer; storing each calibration input as a fixed input to a corresponding input node of the trained neural network; and providing a multi-gas sensor output for at least a part of the gases to be detected and/or sensed by the multi-gas sensor dependent on the trained neural network and actual measured sensor values from the sensor elements.

Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.

Abstract: A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes a holding portion extending from the two-dimensional layer towards the carrier beyond the at least a portion of the two-dimensional layer spaced apart from the carrier.

Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.

Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.

Abstract: A drawer wall element for a drawer. A marginal section of a drawer base is insertable to form a drawer side wall that adjoins the drawer base. The drawer wall element comprises a wall profile part and a base-receiving profile part. The drawer wall element comprises a support surface, present on the base-receiving profile part, for providing underside support to the drawer base. The wall profile part comprises a chamber section having an inner wall sheet section and an outer wall sheet section. A filler element is inserted into the chamber section. The filler element comprises a spring element, which in an inserted state has a defined pretension.

Abstract: A fluid sensor comprises a sensor material configured to come into contact at a surface region of same with a fluid and to obtain a first temporal change of a resistance value of the sensor material on the basis of the contact in a first sensor configuration and to obtain a second temporal change of the resistance value of the sensor material on the basis of the contact in a second sensor configuration. The fluid sensor comprises an output element configured to provide a sensor signal on the basis of the first and second temporal change of the resistance value.

Abstract: A method for use in manufacturing an electronic component comprises forming a layered structure comprising a dielectric structure layer, a channel layer and a gate layer. The dielectric structure layer comprises a first portion and a second portion that differ from one another in respect of fixed charges. The channel layer comprises a two-dimensional material. The gate layer comprises a gate formed above both, the first portion of the dielectric structure layer and the second portion of the dielectric structure layer. A device for use as an electronic component comprises a dielectric structure and a gate above the dielectric structure and a two-dimensional material between the dielectric structure and the gate. The dielectric structure is configured to expose the two-dimensional material to an inhomogeneous electric field.

Abstract: A process for the formation of a graphene membrane component includes arranging a graphene membrane in a relaxed condition of the graphene membrane on a surface of a supportive substrate. The graphene membrane extends across a cut-out with an opening at the surface of the supportive substrate. The graphene membrane is moreover arranged so that a first portion of the graphene membrane is arranged on the surface of the supportive substrate and a second portion of the graphene membrane is arranged over the opening of the cut-out. The process further includes tensioning of the second portion of the graphene membrane, in order to convert the second portion of the graphene membrane to a tensioned condition, so that the second portion of the graphene membrane is permanently in the tensioned condition in an operating temperature range of the graphene membrane component.

Abstract: According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.

Abstract: A layer structure may include a carrier, a two-dimensional layer, and a holding structure. The holding structure is arranged on the carrier and holds the two-dimensional layer on the carrier such that at least a portion of the two-dimensional layer is spaced apart from the carrier. The holding structure includes a holding portion extending from the two-dimensional layer towards the carrier beyond the at least a portion of the two-dimensional layer spaced apart from the carrier.

Abstract: Various embodiments relate to a gas sensor, including: a carrier, an electrode structure; and a sensor layer in contact with the electrode structure, wherein the sensor layer includes or essentially consists of turbostratic graphite.

Abstract: According to various embodiments, a method for processing a carrier may include: forming a layer structure over the carrier, the layer structure including a support layer and a two-dimensional layer over the support layer; wherein the layer structure has at least one opening that exposes a portion of the carrier; forming an auxiliary layer structure, wherein the auxiliary layer structure at least partially covers the layer structure and at least partially fills the at least one opening; and removing the support layer of the layer structure.

Abstract: A drawer wall element for a drawer. A marginal section of a drawer base is insertable to form a drawer side wall that adjoins the drawer base. The drawer wall element comprises a wall profile part and a base-receiving profile part. The drawer wall element comprises a support surface, present on the base-receiving profile part, for providing underside support to the drawer base. The wall profile part comprises a chamber section having an inner wall sheet section and an outer wall sheet section. A filler element is inserted into the chamber section. The filler element comprises a spring element, which in an inserted state has a defined pretension.

Abstract: According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric cha

Abstract: According to various embodiments, an electronic device may include: a layer including a two-dimensional material; a dielectric structure at a first side of the layer, wherein the dielectric structure includes a first contact region and a second contact region, the first contact region defining a first contact area of the layer and the second contact region defining a second contact area of the layer, and the first contact region and the second contact region further defining a device area of the layer between the first contact area and the second contact area of the layer; a first electrode and a second electrode disposed at a second side of the layer opposite to the first side, wherein the first electrode is in direct physical contact with the first contact area of the layer and wherein the second electrode is in direct physical contact with the second contact area of the layer, wherein the first contact region and the second contact region of the dielectric structure are configured to adjust an electric cha