Patents by Inventor Matthias Kogler

Matthias Kogler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Current control using thermally matched resistors
    Patent number: 8129789
    Abstract: A semiconductor chip includes a semiconductor body having an upper surface. At least one power semiconductor component is integrated in the semiconductor chip together with other circuitry. Two or more vertically spaced metallization layers are arranged on the surface of the semiconductor body. The top metallization layer includes terminals establishing an electrical connection to load terminals of the power semiconductor component. A current measurement resistor is formed by a portion of the top metallization layer for sensing a load current of the power semiconductor component. A temperature measurement resistor is formed by a portion of at least one of the vertically spaced metallization layers, electrically isolated from current measurement resistor but thermally coupled thereto such that the current measurement resistor and the temperature measurement resistor have the same temperature.
    Type: Grant
    Filed: May 28, 2010
    Date of Patent: March 6, 2012
    Assignee: Infineon Technologies AG
    Inventors: Alexander Mayer, Guenter Herzele, Andreas Tschmelitsch, Matthias Kogler
  • Current Control Using Thermally Matched Resistors
    Publication number: 20110291741
    Abstract: A semiconductor chip includes a semiconductor body having an upper surface. At least one power semiconductor component is integrated in the semiconductor chip together with other circuitry. Two or more vertically spaced metallization layers are arranged on the surface of the semiconductor body. The top metallization layer includes terminals establishing an electrical connection to load terminals of the power semiconductor component. A current measurement resistor is formed by a portion of the top metallization layer for sensing a load current of the power semiconductor component. A temperature measurement resistor is formed by a portion of at least one of the vertically spaced metallization layers, electrically isolated from current measurement resistor but thermally coupled thereto such that the current measurement resistor and the temperature measurement resistor have the same temperature.
    Type: Application
    Filed: May 28, 2010
    Publication date: December 1, 2011
    Inventors: Alexander Mayer, Guenter Herzele, Andreas Tschmelitsch, Matthias Kogler