Patents by Inventor Matthias KROJER

Matthias KROJER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11804505
    Abstract: A Complementary Metal Oxide Semiconductor (CMOS) wavefront sensor including a sensor element having an array of photodiodes and a passivation layer covering the sensor element. The sensor further includes a binary lens formed in the passivation layer and arranged to focus incident light onto the sensor element.
    Type: Grant
    Filed: August 28, 2020
    Date of Patent: October 31, 2023
    Assignee: X-FAB SEMICONDUCTOR FOUNDRIES GMBH
    Inventor: Matthias Krojer
  • Patent number: 11575061
    Abstract: A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: February 7, 2023
    Assignee: X-FAB SEMICONDUCTOR FOUNDRIES GMBH
    Inventors: Daniel Gäbler, Hannes Schmidt, Pablo Siles, Matthias Krojer, Alexander Zimmer
  • Patent number: 11037974
    Abstract: An optical sensor in an integrated Complementary Metal Oxide Semiconductor, CMOS, device, the sensor including a sensor element with an optical active region and a CMOS backend stack including one or more layers. The sensor further includes an optical lens formed in a layer of the one or more layers and arranged to direct light incident upon it towards the sensor element.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: June 15, 2021
    Assignee: X-FAB SEMICONDUCTOR FOUNDRIES GMBH
    Inventors: Alexander Zimmer, Daniel Gabler, Matthias Krojer
  • Publication number: 20210066376
    Abstract: A Complementary Metal Oxide Semiconductor (CMOS) wavefront sensor including a sensor element having an array of photodiodes and a passivation layer covering the sensor element. The sensor further includes a binary lens formed in the passivation layer and arranged to focus incident light onto the sensor element.
    Type: Application
    Filed: August 28, 2020
    Publication date: March 4, 2021
    Applicant: X-FAB Semiconductor Foundries GmbH
    Inventor: Matthias KROJER
  • Publication number: 20200411710
    Abstract: A single photon avalanche diode (SPAD) device comprises: a silicon layer; an active region in said silicon layer for detecting incident light; and a blocking structure overlapping said active region for blocking incident light having a wavelength at least in the range of 200 nm to 400 nm, so that light having said wavelength can only be detected by said SPAD device when incident upon a region of said silicon layer outside of said active region.
    Type: Application
    Filed: June 24, 2020
    Publication date: December 31, 2020
    Inventors: Daniel Gäbler, Hannes Schmidt, Pablo Siles, Matthias Krojer, Alexander Zimmer
  • Publication number: 20190363125
    Abstract: An optical sensor in an integrated Complementary Metal Oxide Semiconductor, CMOS, device, the sensor including a sensor element with an optical active region and a CMOS backend stack including one or more layers. The sensor further includes an optical lens formed in a layer of the one or more layers and arranged to direct light incident upon it towards the sensor element.
    Type: Application
    Filed: February 4, 2019
    Publication date: November 28, 2019
    Applicant: X-FAB Semiconductor Foundries AG
    Inventors: Alexander ZIMMER, Daniel GABLER, Matthias KROJER