Abstract: A micromechanical rate-of-rotation sensor set-up, including a first rate-of-rotation sensor device capable of being driven rotationally by a driving device via a drive frame device, so as to oscillate about a first axis, and is for measuring a first outer rate of rotation about a second axis and a second outer rate of rotation about a third axis; and a second rate-of-rotation sensor device capable of being driven by the driving device via the drive frame device, so as to oscillate linearly along the second axis, and is for measuring a third outer rate of rotation about the first axis. The first rate-of-rotation sensor device is connected to the second rate-of-rotation sensor device by the drive frame device. The drive frame device includes a first and second drive frame, which may be driven by the driving device in phase opposition, along the third axis, in an oscillatory manner.

Abstract: A micromechanical component for a yaw rate sensor. The component includes a substrate having a substrate surface, a first rotor mass developed in one piece, which is able to be set into a first torsional vibration about a first axis of rotation aligned perpendicular to the substrate surface, and at least one first component of the micromechanical component. The first rotor mass is connected to the at least one first component via at least one first spring element. The at least one first spring element extends through a lateral concavity on the first rotor mass in each case and is connected to a recessed edge region of the first rotor mass. A yaw rate sensor and a production method for a micromechanical component for a yaw rate sensor, are also described.

Abstract: A micromechanical component for a rotation rate sensor. The micromechanical component includes two rotor masses, mirror symmetrical with respect to a first plane of symmetry aligned perpendicularly to a substrate surface and passing through the center of the two rotor masses, which may be set in rotational vibrating motion about rotational axes aligned perpendicularly to the substrate surface, and four seismic masses, mirror symmetrical with respect to the first plane of symmetry, deflectable in parallel to the first plane of symmetry using the two rotor masses set in their respective rotational vibrating motion. The first rotor mass and a first pair of the four seismic masses connected thereto are mirror symmetrical to the second rotor mass and to a second pair of the four seismic masses connected thereto with respect to a second plane of symmetry aligned perpendicularly to the substrate surface and to the first plane of symmetry.

Abstract: A micromechanical rate-of-rotation sensor set-up, including a first rate-of-rotation sensor device capable of being driven rotationally by a driving device via a drive frame device, so as to oscillate about a first axis, and is for measuring a first outer rate of rotation about a second axis and a second outer rate of rotation about a third axis; and a second rate-of-rotation sensor device capable of being driven by the driving device via the drive frame device, so as to oscillate linearly along the second axis, and is for measuring a third outer rate of rotation about the first axis. The first rate-of-rotation sensor device is connected to the second rate-of-rotation sensor device by the drive frame device. The drive frame device includes a first and second drive frame, which may be driven by the driving device in phase opposition, along the third axis, in an oscillatory manner.

Abstract: A rotation-rate sensor having a substrate, the substrate having a main-extension-plane, and the rotation-rate sensor includes at least one first and one second mass-element which are oscillate-able, and a first main-extension-direction of the substrate points from the first mass-element to the second mass-element, and a coupling-structure is situated in the first main-extension-direction between the first and second mass-element, in which a first coupling-region of the coupling-structure is situated in a first function-layer, and a first mass-region of the first mass-element is situated in the first function-layer and a second mass-region of the first mass-element is situated in a second function-layer, the first function-layer being situated in an extension-direction perpendicular to the main-extension-plane between the substrate and the second function-layer, a second main-extension-direction being situated perpendicular to the first main-extension-direction, and the first coupling-region having a greater e

Abstract: A yaw-rate sensor with a substrate having a main extension plane. The yaw-rate sensor includes a rotation-element assembly, the rotation-element assembly being designed for detecting yaw rates prevailing in a first main extension axis of the substrate and yaw rates prevailing in a second main extension axis of the substrate perpendicular to the first main extension axis. The yaw-rate sensor has a sensor assembly, the sensor assembly being designed for detecting a yaw rate prevailing perpendicular to the main extension plane of the substrate, both the sensor assembly and the rotation-element assembly being drivable with the aid of a drive assembly, the drive assembly being designed for driving movement along the first main extension axis.

Abstract: A computer-implemented method for inferring a device feature of a device produced on a wafer. The method includes: providing a wafer feature model associating a wafer position indicating a position of a produced device on the wafer to a device feature, wherein the wafer feature model is configured to be trained by one or more wafer feature maps and particularly configured as a Gaussian process model, providing a sample device feature of at least one device at a sample wafer position, and inferring the device feature of at least one other device of the wafer depending on the provided wafer feature model.

Abstract: A MEMS device and a corresponding operating method. The MEMS device is equipped with an oscillatory micromechanical system, which is excitable in a plurality of useful modes, the oscillatory micromechanical system including at least one system component, which is excitable in at least one parasitic spurious mode by a superposition of the useful modes. An adjusting device is provided, which is configured in such a way that it counteracts the parasitic spurious mode by application of an electromagnetic interaction to the system component.

Abstract: A micromechanical rotation rate sensor system and a corresponding manufacturing method are described. The micromechanical rotation rate sensor system includes a first rotation rate sensor unit drivable rotatorily about a first axis in an oscillating manner for detecting a first outside rotation rate about a second axis and a second outside rotation rate about a third axis, the first, second and third axes being situated perpendicularly to one another, and a second rotation rate sensor unit linearly drivable by a drive unit along the second axis in an oscillating manner for detecting a third outside rotation rate about the first axis. The second rotation rate sensor unit is connected to the first rotation rate sensor unit via a first coupling unit for driving the first rotation rate sensor unit by the drive unit.

Abstract: A micromechanical component for a yaw rate sensor. The component includes a substrate having a substrate surface, a first rotor mass developed in one piece, which is able to be set into a first torsional vibration about a first axis of rotation aligned perpendicular to the substrate surface, and at least one first component of the micromechanical component. The first rotor mass is connected to the at least one first component via at least one first spring element. The at least one first spring element extends through a lateral concavity on the first rotor mass in each case and is connected to a recessed edge region of the first rotor mass. A yaw rate sensor and a production method for a micromechanical component for a yaw rate sensor, are also described.

Abstract: A yaw-rate sensor with a substrate having a main extension plane. The yaw-rate sensor includes a rotation-element assembly, the rotation-element assembly being designed for detecting yaw rates prevailing in a first main extension axis of the substrate and yaw rates prevailing in a second main extension axis of the substrate perpendicular to the first main extension axis. The yaw-rate sensor has a sensor assembly, the sensor assembly being designed for detecting a yaw rate prevailing perpendicular to the main extension plane of the substrate, both the sensor assembly and the rotation-element assembly being drivable with the aid of a drive assembly, the drive assembly being designed for driving movement along the first main extension axis.

Abstract: A computer-implemented method for inferring a device feature of a device produced on a wafer. The method includes: providing a wafer feature model associating a wafer position indicating a position of a produced device on the wafer to a device feature, wherein the wafer feature model is configured to be trained by one or more wafer feature maps and particularly configured as a Gaussian process model, providing a sample device feature of at least one device at a sample wafer position, and inferring the device feature of at least one other device of the wafer depending on the provided wafer feature model.

Abstract: A computer-implemented method for the self-calibration of an inertial sensor. The method includes: establishing data that relate to the inertial sensor; subdividing the data into training data and test data; setting a first target accuracy value for a first artificial neural network that includes linear activation functions; training the first artificial neural network using the training data; inputting the test data into the trained first artificial neural network in order to obtain a first output value of the first artificial neural network; establishing a first output accuracy value based on a comparison result between the first output value and the test data; storing weightings and the linear activation functions of the first artificial neural network in a memory unit of the inertial sensor if the first output accuracy value is greater than the first target accuracy value, or otherwise, training the first artificial neural network again using the training data.

Abstract: A micromechanical z-inertial sensor having a movable MEMS structure developed in a second function layer; first spring elements developed in a first function layer, and a first electrode developed in the first function layer, the first spring elements being connected to the movable MEMS structure and to a substrate, and the first function layer being situated below the second function layer; second spring elements developed in a third function layer, and a second electrode developed in the third function layer, the second spring elements being connected to the movable MEMS structure and to the substrate, and the third function layer being disposed above the second function layer; the movable MEMS structure being deflectable in the z-direction with the aid of the spring elements, and in a defined manner, not being deflectable in the x- and y-directions.

Abstract: A micromechanical rotational rate sensor system includes a first rotational rate sensor device that can be driven rotationally about a first axis in oscillating fashion for acquiring a first external rate of rotation about a second axis and a second external rate of rotation about a third axis, the first, second, and third axes being perpendicular to one another; and a second rotational rate sensor device, capable of being driven in linearly oscillating fashion along the second axis, for acquiring a third external rate of rotation about the first axis. The first rotational rate sensor device is connected to the second rotational rate sensor device via a drive frame device. The drive frame device has a first drive frame and a second drive frame that are capable of being driven in oscillating fashion by the drive device with opposite phase along the third axis.

Abstract: A rotation-rate sensor having a substrate, the substrate having a main-extension-plane, and the rotation-rate sensor includes at least one first and one second mass-element which are oscillate-able, and a first main-extension-direction of the substrate points from the first mass-element to the second mass-element, and a coupling-structure is situated in the first main-extension-direction between the first and second mass-element, in which a first coupling-region of the coupling-structure is situated in a first function-layer, and a first mass-region of the first mass-element is situated in the first function-layer and a second mass-region of the first mass-element is situated in a second function-layer, the first function-layer being situated in an extension-direction perpendicular to the main-extension-plane between the substrate and the second function-layer, a second main-extension-direction being situated perpendicular to the first main-extension-direction, and the first coupling-region having a greater e

Abstract: A micromechanical rotation rate sensor system and a corresponding manufacturing method are described. The micromechanical rotation rate sensor system includes a first rotation rate sensor unit drivable rotatorily about a first axis in an oscillating manner for detecting a first outside rotation rate about a second axis and a second outside rotation rate about a third axis, the first, second and third axes being situated perpendicularly to one another, and a second rotation rate sensor unit linearly drivable by a drive unit along the second axis in an oscillating manner for detecting a third outside rotation rate about the first axis. The second rotation rate sensor unit is connected to the first rotation rate sensor unit via a first coupling unit for driving the first rotation rate sensor unit by the drive unit.

Abstract: A MEMS device and a corresponding operating method. The MEMS device is equipped with an oscillatory micromechanical system, which is excitable in a plurality of useful modes, the oscillatory micromechanical system including at least one system component, which is excitable in at least one parasitic spurious mode by a superposition of the useful modes. An adjusting device is provided, which is configured in such a way that it counteracts the parasitic spurious mode by application of an electromagnetic interaction to the system component.

Abstract: A micromechanical z-inertial sensor having a movable MEMS structure developed in a second function layer; first spring elements developed in a first function layer, and a first electrode developed in the first function layer, the first spring elements being connected to the movable MEMS structure and to a substrate, and the first function layer being situated below the second function layer; second spring elements developed in a third function layer, and a second electrode developed in the third function layer, the second spring elements being connected to the movable MEMS structure and to the substrate, and the third function layer being disposed above the second function layer; the movable MEMS structure being deflectable in the z-direction with the aid of the spring elements, and in a defined manner, not being deflectable in the x- and y-directions.

Abstract: A micromechanical rotational rate sensor system includes a first rotational rate sensor device that can be driven rotationally about a first axis in oscillating fashion for acquiring a first external rate of rotation about a second axis and a second external rate of rotation about a third axis, the first, second, and third axes being perpendicular to one another; and a second rotational rate sensor device, capable of being driven in linearly oscillating fashion along the second axis, for acquiring a third external rate of rotation about the first axis. The first rotational rate sensor device is connected to the second rotational rate sensor device via a drive frame device. The drive frame device has a first drive frame and a second drive frame that are capable of being driven in oscillating fashion by the drive device with opposite phase along the third axis.