Patents by Inventor Matthias Lipinsky

Matthias Lipinsky has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processing
    Patent number: 7541290
    Abstract: Methods of forming integrated circuit devices include steps to selectively widen portions of a mask pattern extending adjacent an outer edge of a semiconductor wafer. These steps to selectively widen portions of the mask pattern are performed so that more uniform center-to-edge critical dimensions (CD) can be achieved when the mask pattern is used to support photolithographically patterning of underlying layers (e.g., insulating layers, antireflective coatings, etc.).
    Type: Grant
    Filed: March 8, 2007
    Date of Patent: June 2, 2009
    Assignees: Samsung Electronics Co., Ltd., International Business Machines Corporation, Infineon Technologies AG, Chartered Semiconductor Manufacturing, Ltd.
    Inventors: Chong Kwang Chang, Wan Jae Park, Len Yuan Tsou, Haoren Zhuang, Matthias Lipinsky, Shailendra Mishra