Patents by Inventor Matthias Patz
Matthias Patz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20130183223Abstract: The present invention relates to a rapid and metal-free process for preparing high order hydridosilane compounds from low order hydridosilane compounds, wherein at least one low order hydridosilane compound (I) is thermally reacted in the presence of at least one hydridosilane compound (II) having a weight average molecular weight of at least 500 g/mol, to the hydridosilane compounds obtainable by the process and to their use.Type: ApplicationFiled: September 27, 2011Publication date: July 18, 2013Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Jutta Hessing, Janette Klatt
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Publication number: 20130168824Abstract: The invention relates to a process for producing p-doped silicon layers, especially those silicon layers which are produced from liquid silane-containing formulations. The invention further relates to a substrate coated with a p-doped silicon layer. The invention additionally relates to the use of particular dopants based on boron compounds for p-doping of a silicon layer.Type: ApplicationFiled: August 19, 2011Publication date: July 4, 2013Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Harald Stueger, Jasmin Lehmkuhl
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Publication number: 20120291665Abstract: The present invention relates to a method for oligomerizing hydridosilanes, wherein a composition comprising substantially at least one non-cyclic hydridosilane having a maximum of 20 silicon atoms as the hydridosilane is thermally converted at temperatures below 235° C. in the absence of a catalyst, the oligomers that can be produced according to the method, and the use thereof.Type: ApplicationFiled: February 16, 2011Publication date: November 22, 2012Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Bernhard Stuetzel, Michael Coelle, Nicole Brausch, Janette Klatt, Jutta Hessing
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Publication number: 20120273805Abstract: The invention relates to a liquid-phase method for the thermal production of silicon layers on a substrate, wherein at least one higher silicon that can be produced from at least one hydridosilane of the generic formula SiaH2a+2 (with a=3-10) being applied to a substrate and then being thermally converted to a layer that substantially consists of silicon, the thermal conversion of the higher silane proceeding at a temperature of 500-900° C. and a conversion time of ?5 minutes. The invention also relates to silicon layers producible according to said method and to their use.Type: ApplicationFiled: November 10, 2010Publication date: November 1, 2012Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Reinhard Carius, Torsten Bronger, Michael Cölle
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Publication number: 20120214005Abstract: The invention relates to a method for producing hydridosilanes from halosilanes by a) reacting i) at least one halosilane of the generic formula SinX2n+2 (with n?3 and X?F, Cl, Br and/or I) with ii) at least one catalyst of the generic formula NRR'aR?bYc with a=0 or 1, b=0 or 1, and c=0 or 1, and formula (I), wherein aa) R, R? and/or R? are —C1-C12 alkyl, —C1-C12 aryl, —C1-C12 aralkyl, —C1-C12 aminoalkyl, —C1-C12 aminoaryl, —C1-C12 aminoaralkyl, and/or two or three groups R, R? and R? (if c=0) together form a cyclic or bicyclic, heteroaliphatic or heteroaromatic system including N, with the proviso that at least one group R, R? or R? is unequal —CH3 and/or wherein bb) R and R? and/or R?' (if c=1) are —C1-C12 alkylene, —C1-C12 arylene, —C1-C12 aralkylene, —C1-C12 heteroalkylene, —C1-C12 heteroarylene, —C1-C12 heteroaralkylene and/or —N?, or cc) (if a=b=c=0) R??C-R?? (with R???—C1-C10 alkyl, —C1-C10 aryl and/or —C1-C10 aralkyl), while forming a mixture comprising at least one halosilane of the generic formula SType: ApplicationFiled: November 8, 2010Publication date: August 23, 2012Applicant: Evonik Degussa GmbHInventors: Stephan Wieber, Matthias Patz, Martin Trocha, Hartwig Rauleder, Ekkehard Mueh, Harald Stueger, Christoph Walkner
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Publication number: 20120205654Abstract: The invention relates to a formulation which contains at least one silane and at least one carbon polymer in a solvent, and to the production of a silicon layer on a substrate which is coated with such a formulation.Type: ApplicationFiled: October 18, 2010Publication date: August 16, 2012Applicant: Enonik Degussa GmbHInventors: Bernhard Stuetzel, Matthias Patz
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Publication number: 20090321805Abstract: One embodiment relates to an integrated circuit that includes a conductive line that is arranged in a groove in a semiconductor body. An insulating material is disposed over the conductive line. This insulating material includes a first insulating layer comprising a horizontal portion, and a second insulating layer that is disposed over the first insulating layer. Other methods, devices, and systems are also disclosed.Type: ApplicationFiled: June 30, 2008Publication date: December 31, 2009Applicant: Qimonda AGInventors: Johannes von Kluge, Arnd Scholz, Joerg Radecker, Matthias Patz, Stephan Kudelka, Alejandro Avellan
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Publication number: 20080242097Abstract: The invention refers to a selective deposition method. A substrate comprising at least one structured surface is provided. The structured surface comprises a first area and a second area. The first area is selectively passivated regarding reactants of a first deposition technique and the second area is activated regarding the reactants the first deposition technique. A passivation layer on the second area is deposited via the first deposition technique. The passivation layer is inert regarding a precursors selected from a group of oxidizing reactants. A layer is deposited in the second area using a second atomic layer deposition technique as second deposition technique using the precursors selected form the group of oxidizing reactants.Type: ApplicationFiled: March 28, 2007Publication date: October 2, 2008Inventors: Tim Boescke, Annette Saenger, Stefan Jakschik, Christian Fachmann, Matthias Patz, Alejandro Avellan, Thomas Hecht, Jonas Sundqvist
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Publication number: 20080173917Abstract: The invention relates to a deposition method performing the following steps. A substrate is provided which is structured to comprise a first surface and a second surface, which differ in at least one of geometric orientation and vertical distance to a principle surface of the substrate. An etchable layer is deposited on the first surface via an atomic layer deposition technique the deposition technique using a first precursor supplied in an amount sufficient to cover at least parts of the first surface and insufficient to cover the second surface, the first precursor being supplied from a direction to pass the first surface before the second surface. A dielectric layer of at least one of a transition metal oxide and a transition metal nitride is deposited on at least the second surface via an atomic layer deposition technique using a second precursor.Type: ApplicationFiled: January 19, 2007Publication date: July 24, 2008Inventors: Matthias Patz, Alexey Ivanov, Stephan Kudelka
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Publication number: 20080176375Abstract: The present invention relates to a deposition of a dielectric layer. On a substrate having a structured area a crystallization seed layer for a dielectric layer is deposited via an atomic layer deposition technique employing a first and a second precursor on the structured area of the substrate. The first pre-cursor is a compound having the constitutional formula M1(R1Cp)x(R2)4-x, wherein M1 is one of hafnium and zirconium, Cp is cyclopentadienyl, R1 is independently selected of methyl, ethyl and alkyl, R2 is independently selected of hydrogen, methyl, ethyl, alkyl and alkoxyl, and x is one or two. The dielectric layer is deposited on the crystallization seed layer via an atomic layer deposition technique employing a third and a forth precursor wherein the third pre-cursor being a compound having the constitutional formula M2 R3 R4 R5 R6, wherein M2 is one of hafnium or zirconium and R3, R4, R5, and R6 are independently selected of alkyl amines.Type: ApplicationFiled: January 8, 2008Publication date: July 24, 2008Applicant: QIMONDA AGInventors: Elke Erben, Stephan Kudelka, Alfred Kersch, Angela Link, Matthias Patz, Jonas Sundqvist
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Patent number: 6890605Abstract: An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided.Type: GrantFiled: September 24, 2002Date of Patent: May 10, 2005Assignee: JSR CorporationInventors: Michinori Nishikawa, Manabu Sekiguchi, Matthias Patz, Mutsuhiko Yoshioka, Atsushi Shiota, Kinji Yamada
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Patent number: 6824833Abstract: A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.Type: GrantFiled: September 27, 2002Date of Patent: November 30, 2004Assignee: JSR CorporationInventors: Michinori Nishikawa, Manabu Sekiguchi, Matthias Patz, Atsushi Shiota, Kinji Yamada
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Publication number: 20030077461Abstract: A stacked film for semiconductor having superior adhesion to a coating film formed by a CVD process in, for example, semiconductor devices, an insulating film having the stacked film and a substrate for semiconductor using the insulating film are disclosed. The stacked film comprises (A) a film of an organic compound having a carbon content of 60% by weight or more and (B) a film prepared by heating a hydrolytic condensate obtained by hydrolysis and condensation of at least one compound selected from the group consisting of specific compounds represented by the general formulae (51) to (54) described hereinabove.Type: ApplicationFiled: September 27, 2002Publication date: April 24, 2003Applicant: JSR CORPORATIONInventors: Michinori Nishikawa, Manabu Sekiguchi, Matthias Patz, Atsushi Shiota, Kinji Yamada
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Publication number: 20030059550Abstract: An insulating film for semiconductors which has excellent adhesion to films formed by CVD and is useful as a dielectric film in semiconductor devices and the like is provided.Type: ApplicationFiled: September 24, 2002Publication date: March 27, 2003Applicant: JSR CORPORATIONInventors: Michinori Nishikawa, Manabu Sekiguchi, Matthias Patz, Mutsuhiko Yoshioka, Atsushi Shiota, Kinji Yamada
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Patent number: 6528605Abstract: A diyne-containing (co)polymer which is soluble in organic solvents, has excellent processability, and gives a cured coating film excellent in heat resistance, solvent resistance, and low-dielectric characteristics, and mechanical strength; processes for producing the same; and a cured film. The diyne-containing (co)polymer contains at least 10 mol % repeating units represented by the following formula (1) and has a weight-average molecular weight of from 500 to 1,000,000: &Brketopenst;C≡C&Parenopenst;Y&Parenclosest;nC≡C—Ar&Brketclosest; (1) wherein Y represents a specific bivalent organic group; Ar represents a bivalent organic group; and n represents 1.Type: GrantFiled: November 8, 2000Date of Patent: March 4, 2003Assignee: JSR CorporationInventors: Toshiyuki Akiike, Matthias Patz, Masayuki Takahashi, Kohei Goto, Michinori Nishikawa, Takashi Okada, Kinji Yamada