Patents by Inventor Matthias Ramm

Matthias Ramm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7161182
    Abstract: A charge separation heterojunction structure which uses a fullerene polymer film as a part of its constituent materials and which may be used to produce a solar cellor a light emitting diode superior in durability, physical properties of electrons and economic merits. The heterojunction structure is such a structure in which an electron-donating electrically conductive high-polymer film and an electron-accepting fullerene polymer film are layered between a pair of electrodes at least one of which is light transmitting. In forming the layers, the fullerene polymer film is identified using in particular the Raman and Nexafs methods in combination so that upper layers are formed after identifying the polymer film.
    Type: Grant
    Filed: December 9, 2002
    Date of Patent: January 9, 2007
    Assignees: Sony Corporation, Research Institute of Innovative Technology for the Earth
    Inventors: Matthias Ramm, Masafumi Ata
  • Patent number: 6998285
    Abstract: A charge separation heterojunction structure which uses a fullerene polymer film as a part of its constituent materials and which may be used to produce a solar cellor a light emitting diode superior in durability, physical properties of electrons and economic merits. The heterojunction structure is such a structure in which an electron-donating electrically conductive high-polymer film and an electron-accepting fullerene polymer film are layered between a pair of electrodes at least one of which is light transmitting. In forming the layers, the fullerene polymer film is identified using in particular the Raman and Nexafs methods in combination so that upper layers are formed after identifying the polymer film.
    Type: Grant
    Filed: May 16, 2003
    Date of Patent: February 14, 2006
    Assignee: Sony Corporation
    Inventors: Matthias Ramm, Masafumi Ata
  • Patent number: 6815067
    Abstract: A carbonaceous complex structure in which a fullerene thin film is used as a part of the constituent material to improve adhesion between neighboring layers to enable a solar cell or a sensor to be produced to high strength, and a method for manufacturing the carbonaceous complex structure, are disclosed. The carbonaceous complex structure includes a substrate 1 of quartz or glass, on which are layered a carbonaceous thin film 2 and a fullerene thin film 3. Thermal decomposition of an organic compound is used for forming the carbonaceous thin film 2, while a method for vapor-depositing or polymerizing fullerene is used for forming the fullerene thin film 3.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: November 9, 2004
    Assignee: Sony Corporation
    Inventors: Masafumi Ata, Matthias Ramm
  • Patent number: 6793967
    Abstract: A method for preparing a carbonaceous complex struture including forming an adherent carbonaceous thin film on a smooth surface of a substrate and forming an adherent fullerine thin film on the thus formed carbonaceous thin film.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: September 21, 2004
    Assignees: Sony Corporation, Research Institute of Innovative Technology for the Earth
    Inventors: Masafumi Ata, Matthias Ramm
  • Publication number: 20030207573
    Abstract: A charge separation heterojunction structure which uses a fullerene polymer film as a part of its constituent materials and which may be used to produce a solar cellor a light emitting diode superior in durability, physical properties of electrons and economic merits. The heterojunction structure is such a structure in which an electron-donating electrically conductive high-polymer film and an electron-accepting fullerene polymer film are layered between a pair of electrodes at least one of which is light transmitting. In forming the layers, the fullerene polymer film is identified using in particular the Raman and Nexafs methods in combination so that upper layers are formed after identifying the polymer film.
    Type: Application
    Filed: May 16, 2003
    Publication date: November 6, 2003
    Inventors: Matthias Ramm, Masafumi Ata
  • Publication number: 20030129436
    Abstract: A charge separation heterojunction structure which uses a fullerene polymer film as a part of its constituent materials and which may be used to produce a solar cellor a light emitting diode superior in durability, physical properties of electrons and economic merits. The heterojunction structure is such a structure in which an electron-donating electrically conductive high-polymer film and an electron-accepting fullerene polymer film are layered between a pair of electrodes at least one of which is light transmitting. In forming the layers, the fullerene polymer film is identified using in particular the Raman and Nexafs methods in combination so that upper layers are formed after identifying the polymer film.
    Type: Application
    Filed: December 9, 2002
    Publication date: July 10, 2003
    Inventors: Matthias Ramm, Masafumi Ata
  • Publication number: 20020197477
    Abstract: A carbonaceous complex structure in which a fullerene thin film is used as a part of the constituent material to improve adhesion between neighboring layers to enable a solar cell or a sensor to be produced to high strength, and a method for manufacturing the carbonaceous complex structure, are disclosed. The carbonaceous complex structure includes a substrate 1 of quartz or glass, on which are layered a carbonaceous thin film 2 and a fullerene thin film 3. Thermal decomposition of an organic compound is used for forming the carbonaceous thin film 2, while a method for vapor-depositing or polymerizing fullerene is used for forming the fullerene thin film 3.
    Type: Application
    Filed: May 30, 2002
    Publication date: December 26, 2002
    Inventors: Masafumi Ata, Matthias Ramm
  • Patent number: 6471929
    Abstract: A photocatalyst having superior durability; a manufacturing method for the photocatalyst and a method and apparatus for decomposing a gas, where a film which is fullerene-based but different from the evaporated fullerene film is used. The photocatalyst has a fullerene polymer film layered on a substrate. There may be carried fine metal particles on the fullerene polymer film. These fine metal particles are carried by sputtering, evaporation or coating on the fullerene polymer film. The apparatus for decomposing the gas includes a light source and a fullerene polymer film. In effecting gas decomposition, the gas to be processed is contacted with the fullerene polymer film under light illumination.
    Type: Grant
    Filed: June 20, 2000
    Date of Patent: October 29, 2002
    Assignee: Sony Corporation
    Inventors: Misao Kusunoki, Tomikazu Watanabe, Shigehide Yamamichi, Masafumi Ata, Shinichi Mizuno, Matthias Ramm