Abstract: The present invention relates to a process for generating a thin inorganic film on a substrate. In particular, the present invention relates to a process in which a compound of formula (I) is brought into a gaseous or an aerosol state and deposited from the gaseous or aerosol state onto a solid substrate: In the formula (I), R1, R2, R3, R4, and R5 are independently hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group; p is 1, 2; M is Ni or Co; X is a ?-donating ligand which coordinates M; m is 1 or 2; and n is 0 to 3.

Abstract: The present invention is in the field of processes for the generation of thin inorganic films on substrates. In particular, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state Lm—M—Xn (I) and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R is independent of each other hydrogen, an alkyl group, an alkenyl group, an aryl group or a silyl group, p is 1, 2 or 3, M is Ni or Co, X is a ?-donating ligand which coordinates M, wherein if present at least one X is a ligand which coordinates M via a phosphor or nitrogen atom, m is 1 or 2 and n is 0 to 3.