Abstract: During the fabrication of microstructure devices, such as integrated circuits, particles may be analyzed by displacing or removing the particles from the device surface and subsequently performing an analysis process. Consequently, a well-defined measurement environment may be established after removal of the particles, which may be accomplished on the basis of nanoprobes and the like. Hence, even critical surface areas may be monitored with respect to contamination and the like on the basis of well-established analysis techniques.

Abstract: By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.

Abstract: When forming sophisticated semiconductor devices, a replacement gate approach may be applied in combination with a self-aligned contact regime by forming the self-aligned contacts prior to replacing the placeholder material of the gate electrode structures.

Abstract: Contact elements of sophisticated semiconductor devices may be formed for gate electrode structures and for drain and source regions in separate process sequences in order to apply electroless plating techniques without causing undue overfill of one type of contact opening. Consequently, superior process uniformity in combination with a reduced overall contact resistance may be accomplished. In some illustrative embodiments, cobalt may be used as a contact metal without any additional conductive barrier materials.

Abstract: Damaged surface areas of low-k dielectric materials may be efficiently repaired by avoiding the saturation of dangling silicon bonds after a reactive plasma treatment on the basis of OH groups, as is typically applied in conventional process strategies. The saturation of the dangling bond may be accomplished by directly initiating a chemical reaction with appropriate organic species, thereby providing superior reaction conditions, which in turn results in a more efficient restoration of the dielectric characteristics.

Abstract: Patterning-induced damage of sensitive low-k dielectric materials in semiconductors devices may be restored to a certain degree on the basis of a surface treatment that is performed prior to exposing the device to ambient atmosphere. To this end, the dangling silicon bonds of the silicon oxide-based low-k dielectric material may be saturated in a confined process environment, thereby providing superior surface conditions for the subsequent application of an appropriate repair chemistry.

Abstract: Analysis of chemical and physical characteristics of polymer species and etch residues caused in critical plasma-assisted etch processes for patterning material layers in semiconductor devices may be accomplished by removing at least a portion of these species on the basis of a probing material layer, which may be lifted-off from the patterned surface. The probing material layer may substantially suppress a chemical modification of the species of interest and may thus allow the examination of the initial status of these species.

Abstract: By using powerful data analysis techniques, such as PCR, PLS, CLS and the like, in combination with measurement techniques providing structural information, gradually varying material characteristics may be determined during semiconductor fabrication, thereby also enabling the monitoring of complex manufacturing sequences. For instance, the material characteristics of sensitive dielectric materials, such as ULK material, may be detected, for instance with respect to an extension of a damage zone, in order to monitor the quality of metallization systems of sophisticated semiconductor devices. The inline measurement data may be obtained on the basis of infrared spectroscopy, for instance using FTIR and the like, which may even allow directly obtaining the measurement data at process chambers, substantially without affecting the overall process throughput.

Abstract: Damaged surface areas of low-k dielectric materials may be efficiently repaired by avoiding the saturation of dangling silicon bonds after a reactive plasma treatment on the basis of OH groups, as is typically applied in conventional process strategies. The saturation of the dangling bond may be accomplished by directly initiating a chemical reaction with appropriate organic species, thereby providing superior reaction conditions, which in turn results in a more efficient restoration of the dielectric characteristics.

Abstract: Silicon oxide based low-k dielectric materials may receive superior hydrophobic surface characteristics on the basis of a plasma treatment using hydrogen and carbon containing radicals. For this purpose, the surface of the low-k dielectric material may be exposed to these radicals, at least in one in situ process in combination with another reactive plasma ambient, for instance used for patterning the low-k dielectric material. Consequently, superior surface characteristics may be established or re-established without significantly contributing to product cycle time.

Abstract: During the patterning of via openings in sophisticated metallization systems of semiconductor devices, the opening may extend through a conductive cap layer and an appropriate ion bombardment may be established to redistribute material of the underlying metal region to exposed sidewall portions of the conductive cap layer, thereby establishing a protective material. Consequently, in a subsequent wet chemical etch process, the probability for undue material removal of the conductive cap layer may be greatly reduced.

Abstract: When forming sophisticated semiconductor devices, a replacement gate approach may be applied in combination with a self-aligned contact regime by forming the self-aligned contacts prior to replacing the placeholder material of the gate electrode structures.

Abstract: Patterning-induced damage of sensitive low-k dielectric materials in semiconductors devices may be restored to a certain degree on the basis of a surface treatment that is performed prior to exposing the device to ambient atmosphere. To this end, the dangling silicon bonds of the silicon oxide-based low-k dielectric material may be saturated in a confined process environment, thereby providing superior surface conditions for the subsequent application of an appropriate repair chemistry.

Abstract: Analysis of chemical and physical characteristics of polymer species and etch residues caused in critical plasma-assisted etch processes for patterning material layers in semiconductor devices may be accomplished by removing at least a portion of these species on the basis of a probing material layer, which may be lifted-off from the patterned surface. The probing material layer may substantially suppress a chemical modification of the species of interest and may thus allow the examination of the initial status of these species.

Abstract: When forming sophisticated metallization systems, surface integrity of an exposed metal surface, such as a copper-containing surface, may be enhanced by exposing the surface to a vapor of a passivation agent. Due to the corresponding interaction with the metal surface, enhanced integrity may be accomplished, while at the same time damage of exposed dielectric surface portions may be significantly reduced compared to conventional aggressive wet chemical cleaning processes that are typically used in conventional patterning regimes.

Abstract: During the formation of a metal line in a low-k dielectric material, an upper portion of a trench formed in a capping layer and the low-k dielectric material is treated to provide enlarged tapering or corner rounding, thereby significantly improving the fill capabilities of subsequent metal deposition processes. In one particular embodiment, an additional etch process is performed after etching through the capping layer and the low-k dielectric layer and after resist removal.

Abstract: During the patterning of via openings in sophisticated metallization systems of semiconductor devices, the opening may extend through a conductive cap layer and an appropriate ion bombardment may be established to redistribute material of the underlying metal region to exposed sidewall portions of the conductive cap layer, thereby establishing a protective material. Consequently, in a subsequent wet chemical etch process, the probability for undue material removal of the conductive cap layer may be greatly reduced.

Abstract: A high yield plasma etch process for an interlayer dielectric layer of a semiconductor device is provided, according to an embodiment of which a dielectric layer is etched with a nitrogen-containing plasma. In this way, the formation of polymers on a backside bevel of a substrate is avoided or substantially reduced. Remaining polymer at the backside bevel can be removed in situ by post-etch treatment. Further, a plasma etching device is provided comprising a chamber, a substrate receiving space for receiving a substrate, a plasma generator for generating a plasma in the chamber and a temperature conditioner for conditioning a temperature at an outer circumferential region of the substrate receiving space and thereby minimizing temperature gradients at a bevel of the wafer.

Abstract: During the patterning of via openings in sophisticated metallization systems of semi-conductor devices, the opening may extend through a conductive cap layer and an appropriate ion bombardment may be established to redistribute material of the underlying metal region to exposed sidewall portions of the conductive cap layer, thereby establishing a protective material. Consequently, in a subsequent wet chemical etch process, the probability for undue material removal of the conductive cap layer may be greatly reduced.

Abstract: Contact elements of sophisticated semiconductor devices may be formed for gate electrode structures and for drain and source regions in separate process sequences in order to apply electroless plating techniques without causing undue overfill of one type of contact opening. Consequently, superior process uniformity in combination with a reduced overall contact resistance may be accomplished. In some illustrative embodiments, cobalt may be used as a contact metal without any additional conductive barrier materials.