Abstract: A method for characterizing microwave components, particularly for calibrating network catalysts for the calibrated measurement of electronic microwave components, which method includes the following processing steps of (A) measuring the scattering coefficients of a number N of calibration standards, which number N of calibration standards is greater than necessary for an analytic determination of calibration parameters to be determined by way of calibration; (B) calculating the calibration parameters dependent on the measured scattering coefficients of the calibration standard. The calculation of the calibration parameters in the processing step B occurs based on an equation system as a function of predetermined Scal-parameters of the calibration standard, and in a processing step C, after the processing step B, a quality criterion of the calibration parameters is determined.

Abstract: The invention relates to a composite structure for electronic microsystems and a method for producing this composite structure, with the composite structure being provided with a polycrystalline diamond layer (4) for heat withdrawal. The growth substrate (1) contains or forms a component layer (2) with the electronic microsystems, which are provided with binary or higher order component compound semiconductors. A protective layer (3), which encloses the component layer at least indirectly almost entirely, is placed between the component layer 2 and the diamond layer (4). A material is selected for the protective layer whose reactivity with the precursor materials present in the deposition of the diamond layer (4) by means of CVD, preferably by means of plasma CVD, is smaller than that of the component layer (2), and said protective layer.

Abstract: The invention relates to a composite structure for electronic Microsystems and a method for producing this composite structure, with the composite structure being provided with a polycrystalline diamond layer (4) for heat withdrawal. The growth substrate (1) contains or forms a component layer (2) with the electronic Microsystems, which are provided with binary or higher order component compound semiconductors. A protective layer (3), which encloses the component layer at least indirectly almost entirely, is placed between the component layer 2 and the diamond layer (4). A material is selected for the protective layer whose reactivity with the precursor materials present in the deposition of the diamond layer (4) by means of CVD, preferably by means of plasma CVD, is smaller than that of the component layer (2), and said protective layer.