Patents by Inventor Matthias Seyboth

Matthias Seyboth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Heterostructure with rear-face donor doping
    Patent number: 7394112
    Abstract: The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated.
    Type: Grant
    Filed: January 3, 2006
    Date of Patent: July 1, 2008
    Assignee: MicroGaN GmbH
    Inventors: Erhard Kohn, Ingo Daumiller, Markus Kamp, Matthias Seyboth
  • Heterostructure with rear-face donor doping
    Patent number: 7352008
    Abstract: The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated.
    Type: Grant
    Filed: June 1, 2001
    Date of Patent: April 1, 2008
    Assignee: Microgan GmbH
    Inventors: Erhard Kohn, Ingo Daumiller, Markus Kamp, Matthias Seyboth
  • Heterostructure with rear-face donor doping
    Publication number: 20060113564
    Abstract: The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and channel or the region around the boundary interface between the channel and capping layer is doped in a manner such that the piezocharges occurring at the respective boundary interface are compensated.
    Type: Application
    Filed: January 3, 2006
    Publication date: June 1, 2006
    Inventors: Erhard Kohn, Ingo Daumiller, Markus Kamp, Matthias Seyboth
  • Heterostructure with rear-face donor doping
    Publication number: 20030155578
    Abstract: The invention relates to a heterostructure with a buffer layer or substrate, a channel arranged on the buffer layer or substrate and a capping layer arranged on the channel. Said channel is made from a piezopolar material and either the region around the boundary interface between the buffer layer or substrate and the channel, or the region around the boundary interface between the channel and the capping layer is doped in such a way that any piezo charging which occurs at the respective boundary interface is compensated.
    Type: Application
    Filed: February 12, 2003
    Publication date: August 21, 2003
    Inventors: Erhard Kohn, Ingo Daumiller, Markus Kamp, Matthias Seyboth