Abstract: An integrated semiconductor memory includes a clock generator circuit for generating an internal clock signal that exhibits a certain phase angle with respect to an external clock signal. The phase angle is dependent on a value of the supply voltage of the clock generator circuit. The supply voltage is provided by a controllable voltage generator that includes a controllable resistor. During the production process, the supply voltage generated can be picked up at a contact pad. The value of the controllable resistor is changed in each memory chip by an automatic production machine until the supply voltage generated matches a target value. The controllable voltage generator can be adjusted individually for each memory chip via fuse elements so that the target value of the supply voltage is achieved with high accuracy for each memory chip.

Abstract: An integrated semiconductor memory includes a clock generator circuit for generating an internal clock signal that exhibits a certain phase angle with respect to an external clock signal. The phase angle is dependent on a value of the supply voltage of the clock generator circuit. The supply voltage is provided by a controllable voltage generator that includes a controllable resistor. During the production process, the supply voltage generated can be picked up at a contact pad. The value of the controllable resistor is changed in each memory chip by an automatic production machine until the supply voltage generated matches a target value. The controllable voltage generator can be adjusted individually for each memory chip via fuse elements so that the target value of the supply voltage is achieved with high accuracy for each memory chip.