Abstract: Method and apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage. The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components.

Abstract: An arrangement comprising a power semiconductor module, a capacitor, a DC-voltage busbar and a connection device. The module has two flat DC-voltage connection conductors each having a contact section. The DC-voltage connection conductors are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction. The capacitor has two flat capacitor connection conductors each having a contact section. The DC-voltage busbar has two partial busbars each having a contact section. The connection device has a yoke with a die and a bearing. The respective contact sections of the DC-voltage connection conductors are clamped flat above one another between the die and the bearing. The contact sections, of the capacitor or the DC-voltage busbar, are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction, and are thus force-fittingly and electrically conductively connected to one another.

Abstract: A power semiconductor module comprising internal load and auxiliary connection devices embodied as wire bonding connections. A substrate has a plurality of load and auxiliary potential areas, wherein a power switch is arranged on a first load potential area, said power switch being embodied as a plurality of controllable power subswitches arranged in series. The power subswitches have a load bonding connection consisting of a plurality of load bonding wires to a second load potential area, wherein a first bonding base is arranged on the second load potential area and an adjacent second bonding base of the respective load bonding wire is arranged on a contact area of the power subswitch.

Abstract: An arrangement comprising a power semiconductor module, a capacitor, a DC-voltage busbar and a connection device. The module has two flat DC-voltage connection conductors each having a contact section. The DC-voltage connection conductors are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction. The capacitor has two flat capacitor connection conductors each having a contact section. The DC-voltage busbar has two partial busbars each having a contact section. The connection device has a yoke with a die and a bearing. The respective contact sections of the DC-voltage connection conductors are clamped flat above one another between the die and the bearing. The contact sections, of the capacitor or the DC-voltage busbar, are arranged closely adjacent to one another on and close to the respective contact sections in the normal direction, and are thus force-fittingly and electrically conductively connected to one another.

Abstract: Method and apparatus for the electrodeposition of a contact metal layer on contact areas of semiconductor components in a wafer assemblage. The method comprises: a) providing a wafer having components having at least one pn junction; b) arranging a non-conductive homogenizing device with respect to the first surfaces of the components, and an electrical contact device at a second surface of the wafer; c) introducing the wafer into an electroplating bath having an electrode, wherein the surface thereof consists at least partly of a first contact metal, and wherein the first surface of the components is in contact with the electroplating bath; d) applying a voltage to the electrode and to the contact device, as a result of which current flows between the electrode and the contact device, through the electroplating bath and the component and contact metal is thus deposited at the first contact areas of the components.

Abstract: A power semiconductor module comprising internal load and auxiliary connection devices embodied as wire bonding connections. A substrate has a plurality of load and auxiliary potential areas, wherein a power switch is arranged on a first load potential area, said power switch being embodied as a plurality of controllable power subswitches arranged in series. The power subswitches have a load bonding connection consisting of a plurality of load bonding wires to a second load potential area, wherein a first bonding base is arranged on the second load potential area and an adjacent second bonding base of the respective load bonding wire is arranged on a contact area of the power subswitch.