Patents by Inventor Matthias STEIERT

Matthias STEIERT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210005568
    Abstract: A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.
    Type: Application
    Filed: September 17, 2020
    Publication date: January 7, 2021
    Inventors: Matthias Steiert, Karolina Gierl
  • Patent number: 10861818
    Abstract: A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.
    Type: Grant
    Filed: March 27, 2019
    Date of Patent: December 8, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Matthias Steiert, Karolina Gierl
  • Patent number: 10793429
    Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
    Type: Grant
    Filed: January 21, 2020
    Date of Patent: October 6, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Matthias Steiert, Christian Geissler, Karolina Zogal
  • Publication number: 20200249380
    Abstract: A method for manufacturing integrated IR (IR=infrared) emitter elements having an optical filter comprises back side etching through a carrier substrate, forming adhesive spacer elements on a conductive layer on the carrier substrate, placing a filter substrate having a filter carrier substrate and a filter layer on the adhesive spacer elements, fixing the adhesive spacer elements to the carrier substrate and the filter substrate by curing, pre-dicing through the filter substrate for exposing the contact pads of the structured conductive layer, and dicing through the frame structure in the carrier substrate for separating the integrated IR emitter elements having the optical filter.
    Type: Application
    Filed: February 3, 2020
    Publication date: August 6, 2020
    Inventors: Stephan Pindl, Matthias Steiert
  • Publication number: 20200156933
    Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
    Type: Application
    Filed: January 21, 2020
    Publication date: May 21, 2020
    Inventors: Matthias Steiert, Christian Geissler, Karolina Zogal
  • Patent number: 10616703
    Abstract: A method for producing a MEMS sound transducer element includes, inter alia, providing a first substrate. The first substrate has a first substrate side, an opposite second substrate side and a membrane layer arranged on the first substrate side. A further method step includes performing a first etching from the second substrate side in a first surface section that is situated opposite the membrane layer, as far as a first depth. A further method step includes performing a second etching of the first substrate from the second substrate side in a second surface section in order to expose the membrane layer in the first surface section and to produce a back volume for the membrane layer, where the second surface section is larger than the first surface section and includes the first surface section.
    Type: Grant
    Filed: April 5, 2018
    Date of Patent: April 7, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Matthias Steiert, Horst Theuss
  • Patent number: 10584028
    Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: March 10, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Matthias Steiert, Christian Geissler, Karolina Zogal
  • Patent number: 10549985
    Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.
    Type: Grant
    Filed: August 31, 2017
    Date of Patent: February 4, 2020
    Assignee: Infineon Technologies AG
    Inventors: Dominic Maier, Matthias Steiert, Chau Fatt Chiang, Christian Geissler, Bernd Goller, Thomas Kilger, Johannes Lodermeyer, Franz-Xaver Muehlbauer, Chee Yang Ng, Beng Keh See, Claus Waechter
  • Patent number: 10486961
    Abstract: In accordance with an embodiment, a MEMS structure is produced on a front side of a substrate. A decoupling structure which has recesses is produced in the substrate, which decoupling structure decouples a first region from a second region of the substrate in terms of stresses. In a rear side, situated opposite the front side, of the substrate, a first cavity is produced by means of a first etching process and a second cavity is produced by means of a second etching process. The first cavity and the second cavity are produced such that the second cavity encompasses the first cavity and such that the second cavity adjoins a base region of the MEMS structure and a base region of the decoupling structure.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: November 26, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventor: Matthias Steiert
  • Publication number: 20190304945
    Abstract: A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.
    Type: Application
    Filed: March 27, 2019
    Publication date: October 3, 2019
    Inventors: Matthias Steiert, Karolina Gierl
  • Patent number: 10407437
    Abstract: Provided herein are camptothecin derivatives and pharmaceutical compositions thereof. In other embodiments, provided herein are methods of treatment, prevention, or amelioration of a variety of medical disorders such as, for example, cancer using the compounds and pharmaceutical compositions disclosed herein.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: September 10, 2019
    Assignee: Los Gatos Pharmaceuticals, Inc.
    Inventors: Peter Langecker, Matthias Steiert, Toshiaki Hino, Jan Scicinksi, Kumarapandian Paulvannan
  • Patent number: 10377626
    Abstract: The present disclosure relates to an apparatus comprising a substrate, wherein a MEMS module is arranged on a first side of the substrate, the output signal from said MEMS module changing in the event of a change in temperature. Furthermore, the apparatus has a housing structure which is arranged on a first side of the substrate and has a recess in which the MEMS module is arranged. The apparatus also has a layer which is applied to the housing structure and increases the heat capacity of the apparatus. The present disclosure also relates to a method for producing an apparatus of this kind.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: August 13, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Bernd Goller, Matthias Steiert
  • Publication number: 20190055117
    Abstract: In accordance with an embodiment, a MEMS structure is produced on a front side of a substrate. A decoupling structure which has recesses is produced in the substrate, which decoupling structure decouples a first region from a second region of the substrate in terms of stresses. In a rear side, situated opposite the front side, of the substrate, a first cavity is produced by means of a first etching process and a second cavity is produced by means of a second etching process. The first cavity and the second cavity are produced such that the second cavity encompasses the first cavity and such that the second cavity adjoins a base region of the MEMS structure and a base region of the decoupling structure.
    Type: Application
    Filed: August 20, 2018
    Publication date: February 21, 2019
    Inventor: Matthias Steiert
  • Publication number: 20180369232
    Abstract: Provided herein are composite nanoparticles, methods of making composite nanoparticles and methods of using composite nanoparticles to treat or ameliorate various diseases, such as, for example, cancer.
    Type: Application
    Filed: July 3, 2018
    Publication date: December 27, 2018
    Inventors: Peter Langecker, Matthias Steiert, Toshiaki Hino, Jan Scicinski, Kumarapandian Paulvannan
  • Patent number: 10155657
    Abstract: The electronic device comprises a semiconductor chip comprising a first main face, a second main face opposite to the first main face, side faces connecting the first and second main faces, and a sensor element or actuator element disposed at the first main face, and a substrate, wherein the semiconductor chip is disposed above the substrate, the first main face of the semiconductor chip facing the substrate, wherein the substrate comprises a substrate opening, the substrate opening permitting passage of signals to the sensor element or from the actuator element.
    Type: Grant
    Filed: August 26, 2016
    Date of Patent: December 18, 2018
    Assignee: Infineon Technologies AG
    Inventors: Matthias Steiert, Kok Yau Chua, Chu Hua Goh, Woon Yau Lim, Christina Yeong
  • Publication number: 20180327258
    Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.
    Type: Application
    Filed: May 9, 2018
    Publication date: November 15, 2018
    Inventors: Matthias Steiert, Christian Geissler, Karolina Zogal
  • Publication number: 20180305200
    Abstract: The present disclosure relates to an apparatus comprising a substrate, wherein a MEMS module is arranged on a first side of the substrate, the output signal from said MEMS module changing in the event of a change in temperature. Furthermore, the apparatus has a housing structure which is arranged on a first side of the substrate and has a recess in which the MEMS module is arranged. The apparatus also has a layer which is applied to the housing structure and increases the heat capacity of the apparatus. The present disclosure also relates to a method for producing an apparatus of this kind.
    Type: Application
    Filed: April 19, 2018
    Publication date: October 25, 2018
    Inventors: Bernd Goller, Matthias Steiert
  • Publication number: 20180295458
    Abstract: A method for producing a MEMS sound transducer element includes, inter alia, providing a first substrate. The first substrate has a first substrate side, an opposite second substrate side and a membrane layer arranged on the first substrate side. A further method step includes performing a first etching from the second substrate side in a first surface section that is situated opposite the membrane layer, as far as a first depth. A further method step includes performing a second etching of the first substrate from the second substrate side in a second surface section in order to expose the membrane layer in the first surface section and to produce a back volume for the membrane layer, where the second surface section is larger than the first surface section and includes the first surface section.
    Type: Application
    Filed: April 5, 2018
    Publication date: October 11, 2018
    Inventors: Matthias Steiert, Horst Theuss
  • Patent number: 10064855
    Abstract: Provided herein are composite nanoparticles, methods of making composite nanoparticles and methods of using composite nanoparticles to treat or ameliorate various diseases, such as, for example, cancer.
    Type: Grant
    Filed: March 8, 2017
    Date of Patent: September 4, 2018
    Assignee: Los Gatos Pharmaceuticals, Inc.
    Inventors: Peter Langecker, Matthias Steiert, Toshiaki Hino, Jan Scicinksi, Kumarapandian Paulvannan
  • Publication number: 20180148322
    Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.
    Type: Application
    Filed: August 31, 2017
    Publication date: May 31, 2018
    Inventors: Dominic Maier, Matthias Steiert, Chau Fatt Chiang, Christian Geissler, Bernd Goller, Thomas Kilger, Johannes Lodermeyer, Franz-Xaver Muehlbauer, Chee Yang Ng, Beng Keh See, Claus Waechter