Abstract: A method for manufacturing integrated IR (IR=infrared) emitter elements having an optical filter comprises back side etching through a carrier substrate, forming adhesive spacer elements on a conductive layer on the carrier substrate, placing a filter substrate having a filter carrier substrate and a filter layer on the adhesive spacer elements, fixing the adhesive spacer elements to the carrier substrate and the filter substrate by curing, pre-dicing through the filter substrate for exposing the contact pads of the structured conductive layer, and dicing through the frame structure in the carrier substrate for separating the integrated IR emitter elements having the optical filter.

Abstract: A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

Abstract: A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

Abstract: A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.

Abstract: A method for manufacturing integrated IR (IR=infrared) emitter elements having an optical filter comprises back side etching through a carrier substrate, forming adhesive spacer elements on a conductive layer on the carrier substrate, placing a filter substrate having a filter carrier substrate and a filter layer on the adhesive spacer elements, fixing the adhesive spacer elements to the carrier substrate and the filter substrate by curing, pre-dicing through the filter substrate for exposing the contact pads of the structured conductive layer, and dicing through the frame structure in the carrier substrate for separating the integrated IR emitter elements having the optical filter.

Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.

Abstract: A method for producing a MEMS sound transducer element includes, inter alia, providing a first substrate. The first substrate has a first substrate side, an opposite second substrate side and a membrane layer arranged on the first substrate side. A further method step includes performing a first etching from the second substrate side in a first surface section that is situated opposite the membrane layer, as far as a first depth. A further method step includes performing a second etching of the first substrate from the second substrate side in a second surface section in order to expose the membrane layer in the first surface section and to produce a back volume for the membrane layer, where the second surface section is larger than the first surface section and includes the first surface section.

Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.

Abstract: A semiconductor package includes a semiconductor die having a sensor structure disposed at a first side of the semiconductor die, and a first port extending through the semiconductor die from the first side to a second side of the semiconductor die opposite the first side, so as to provide a link to the outside environment. Corresponding methods of manufacture are also provided.

Abstract: In accordance with an embodiment, a MEMS structure is produced on a front side of a substrate. A decoupling structure which has recesses is produced in the substrate, which decoupling structure decouples a first region from a second region of the substrate in terms of stresses. In a rear side, situated opposite the front side, of the substrate, a first cavity is produced by means of a first etching process and a second cavity is produced by means of a second etching process. The first cavity and the second cavity are produced such that the second cavity encompasses the first cavity and such that the second cavity adjoins a base region of the MEMS structure and a base region of the decoupling structure.

Abstract: A device includes a base substrate with a sensor component arranged thereon; a spacer layer on the base substrate, wherein the spacer layer is structured in order to predefine a cavity region, in which the sensor component is arranged in an exposed fashion on the base substrate, and a DAF tape element (DAF=Die-Attach-Film) on a stack element, wherein the DAF tape element mechanically fixedly connects the stack element to the spacer layer arranged on the base substrate and to obtain the cavity region.

Abstract: Provided herein are camptothecin derivatives and pharmaceutical compositions thereof. In other embodiments, provided herein are methods of treatment, prevention, or amelioration of a variety of medical disorders such as, for example, cancer using the compounds and pharmaceutical compositions disclosed herein.

Abstract: The present disclosure relates to an apparatus comprising a substrate, wherein a MEMS module is arranged on a first side of the substrate, the output signal from said MEMS module changing in the event of a change in temperature. Furthermore, the apparatus has a housing structure which is arranged on a first side of the substrate and has a recess in which the MEMS module is arranged. The apparatus also has a layer which is applied to the housing structure and increases the heat capacity of the apparatus. The present disclosure also relates to a method for producing an apparatus of this kind.

Abstract: In accordance with an embodiment, a MEMS structure is produced on a front side of a substrate. A decoupling structure which has recesses is produced in the substrate, which decoupling structure decouples a first region from a second region of the substrate in terms of stresses. In a rear side, situated opposite the front side, of the substrate, a first cavity is produced by means of a first etching process and a second cavity is produced by means of a second etching process. The first cavity and the second cavity are produced such that the second cavity encompasses the first cavity and such that the second cavity adjoins a base region of the MEMS structure and a base region of the decoupling structure.

Abstract: Provided herein are composite nanoparticles, methods of making composite nanoparticles and methods of using composite nanoparticles to treat or ameliorate various diseases, such as, for example, cancer.

Abstract: The electronic device comprises a semiconductor chip comprising a first main face, a second main face opposite to the first main face, side faces connecting the first and second main faces, and a sensor element or actuator element disposed at the first main face, and a substrate, wherein the semiconductor chip is disposed above the substrate, the first main face of the semiconductor chip facing the substrate, wherein the substrate comprises a substrate opening, the substrate opening permitting passage of signals to the sensor element or from the actuator element.

Abstract: A production method includes providing a semiconductor substrate with a wiring layer stack having cutouts on a first main surface region of the semiconductor substrate at which MEMS components are arranged in an exposed manner in the cutouts and projecting through contact elements are arranged at metallization regions of the wiring layer stack; applying a b-stage material layer cured in an intermediate stage on the wiring layer stack, such that the cutouts are covered by the b-stage material layer and the vertically projecting through contact elements are introduced into the b-stage material layer; curing the b-stage material layer to obtain a cured b-stage material layer; thinning the cured b-stage material layer; and applying a redistribution layer (RDL) structure on the thinned, cured b-stage material layer to obtain an electrical connection between the wiring layer stack and the RDL structure via the through contact elements.

Abstract: The present disclosure relates to an apparatus comprising a substrate, wherein a MEMS module is arranged on a first side of the substrate, the output signal from said MEMS module changing in the event of a change in temperature. Furthermore, the apparatus has a housing structure which is arranged on a first side of the substrate and has a recess in which the MEMS module is arranged. The apparatus also has a layer which is applied to the housing structure and increases the heat capacity of the apparatus. The present disclosure also relates to a method for producing an apparatus of this kind.

Abstract: A method for producing a MEMS sound transducer element includes, inter alia, providing a first substrate. The first substrate has a first substrate side, an opposite second substrate side and a membrane layer arranged on the first substrate side. A further method step includes performing a first etching from the second substrate side in a first surface section that is situated opposite the membrane layer, as far as a first depth. A further method step includes performing a second etching of the first substrate from the second substrate side in a second surface section in order to expose the membrane layer in the first surface section and to produce a back volume for the membrane layer, where the second surface section is larger than the first surface section and includes the first surface section.