Abstract: A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. First electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a first side face of the encapsulation body. Second electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a second side face of the encapsulation body opposite the first side face. A first group of the first electrical contact elements and a second group of the first electrical contact elements are spaced apart by a distance D that is greater than a distance P between adjacent first electrical contact elements of the first group and between adjacent first electrical contact elements of the second group. The distances D and P are measured between center axes of electrical contact elements.

Abstract: A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.

Abstract: A semiconductor chip package includes a semiconductor chip disposed over a main surface of a carrier. An encapsulation body encapsulates the chip. First electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a first side face of the encapsulation body. Second electrical contact elements are electrically coupled to the chip and protrude out of the encapsulation body through a second side face of the encapsulation body opposite the first side face. A first group of the first electrical contact elements and a second group of the first electrical contact elements are spaced apart by a distance D that is greater than a distance P between adjacent first electrical contact elements of the first group and between adjacent first electrical contact elements of the second group. The distances D and P are measured between center axes of electrical contact elements.

Abstract: A method is disclosed for detecting x-rays using an x-ray detector which includes a direct-conversion semiconductor detector element. Additional radiation is supplied to the semiconductor detector element using a radiation source, and the supply of the additional radiation is controlled and/or regulated on the basis of a specified target value. In at least one embodiment, the target value can be specified in a variable manner over time as a sequence of target values. An x-ray detector system is further disclosed, with which the method can be carried out.

Abstract: An X-ray detector is disclosed, in particular for a computed tomography system. In an embodiment, the X-ray detector includes a regular arrangement of measuring pixels for covering a measuring surface. A plurality of the measuring pixels of the regular arrangement are constructed as direct converting measuring pixels, and remaining ones of the measuring pixels are constructed as indirect converting measuring pixels.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a CT system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation. In at least one embodiment, the at least one collimator includes at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected to the semiconductor material. In another embodiment, a CT system including the direct-converting x-ray radiation detector, and a method for detecting incident x-ray radiation via a direct-converting x-ray radiation detector, in particular for use in a CT system, are disclosed.

Abstract: In an embodiment, a semiconductor device includes a High Electron Mobility Transistor (HEMT) including a floating gate. The floating gate includes two or more electrically separated floating gate segments.

Abstract: A production method of a semiconductor element of a direct-converting x-ray detector is disclosed, wherein at least one intermediate layer is applied to a semiconductor layer and at least one contact layer is applied to an exposed intermediate layer by chemically currentless deposition of a contact material from a solution in each instance. The materials for the individual layers are selected such that the electrochemical potential of the materials of the at least one intermediate layer is greater than the electrochemical potential of at least one element of the semiconductor layer and the electrochemical potential of the contact material of the contract layer is greater than the electrochemical potential of the materials of the intermediate layers. Semiconductor elements produced in accordance with the method, an x-ray detector with semiconductor elements, an x-ray system with an x-ray detector and also a CT system with an x-ray detector are also disclosed.

Abstract: In an embodiment, a semiconductor device includes a High Electron Mobility Transistor (HEMT) including a floating gate. The floating gate includes two or more electrically separated floating gate segments.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, at least including a semiconductor used to detect x-ray radiation and at least one electrode attached to the semiconductor. In an embodiment, the semiconductor and the at least one electrode are electrically conductively connected and the at least one electrode is designed to be transparent and electrically conductive. A CT system is further disclosed, at least including the direct-converting x-ray radiation detector.

Abstract: An enhancement mode device includes a floating gate structure. The floating gate structure includes a first bottom dielectric layer, a second bottom dielectric layer on the first bottom dielectric layer and a conductive floating gate on the second bottom dielectric layer.

Abstract: A semiconductor device includes a III-nitride semiconductor substrate having a two-dimensional charge carrier gas at a depth from a main surface of the III-nitride semiconductor substrate. A surface protection layer is provided on the main surface of the III-nitride semiconductor substrate. The surface protection layer has charge traps in a band gap which exist at room temperature operation of the semiconductor device. A contact is provided in electrical connection with the two-dimensional charge carrier gas in the III-nitride semiconductor substrate. A charge protection layer is provided on the surface protection layer. The charge protection layer includes an oxide and shields the surface protection layer under the charge protection layer from radiation with higher energy than the bandgap energy of silicon nitride.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, at least including a semiconductor used to detect x-ray radiation and at least one electrode attached to the semiconductor. In an embodiment, the semiconductor and the at least one electrode are electrically conductively connected and the at least one electrode is designed to be transparent and electrically conductive. A CT system is further disclosed, at least including the direct-converting x-ray radiation detector.

Abstract: A direct-converting x-ray radiation detector is disclosed for detecting x-ray radiation, in particular for use in a CT system. In an embodiment, the detector includes a semiconductor material used for detecting the x-ray radiation; at least one collimator; and at least one radiation source, to irradiate the semiconductor material with additional radiation. In at least one embodiment, the at least one collimator includes at least one reflection layer on a side facing the semiconductor material, on which the additional radiation is reflected to the semiconductor material. In another embodiment, a CT system including the direct-converting x-ray radiation detector, and a method for detecting incident x-ray radiation via a direct-converting x-ray radiation detector, in particular for use in a CT system, are disclosed.

Abstract: A direct radiation converter is disclosed which includes a radiation detection material having an anode side and a cathode side in which the radiation detection material has a doping profile running in the anode-side to cathode-side direction. A radiation detector is further disclosed having such a direct radiation converter and having an anode array and a cathode array, and optionally having evaluation electronics for reading out a detector signal, as well as a medical apparatus having such a radiation detector. Also described is a method for producing a direct radiation converter which includes incorporating into a radiation detection material a doping profile running in the anode-side to cathode-side direction.

Abstract: A method is disclosed for detecting x-rays using an x-ray detector which includes a direct-conversion semiconductor detector element. Additional radiation is supplied to the semiconductor detector element using a radiation source, and the supply of the additional radiation is controlled and/or regulated on the basis of a specified target value. In at least one embodiment, the target value can be specified in a variable manner over time as a sequence of target values. An x-ray detector system is further disclosed, with which the method can be carried out.

Abstract: An enhancement mode device includes a floating gate structure. The floating gate structure includes a first bottom dielectric layer, a second bottom dielectric layer on the first bottom dielectric layer and a conductive floating gate on the second bottom dielectric layer.

Abstract: A method is disclosed for detecting incident X-ray radiation by way of a direct-converting X-ray radiation detector. A semi-conductor material used for detection purposes is irradiated with additional radiation with an energy level of at least 1.6 eV in order to produce additional charge carriers. A direct-converting X-ray radiation detector is disclosed for detecting X-ray radiation, at least including a semi-conductor material used for X-ray detection and at least one radiation source which irradiates the semi-conductor material with additional radiation, the radiation having an energy level of at least 1.6 eV. A CT system including an X-ray radiation detector is also disclosed.

Abstract: A detector element is disclosed with a semi-conductive converter element and metal contacts arranged thereon for at least one anode and at least one cathode, wherein at least one of the metal contacts comprises a contact layer made from a contact material based on precious metal and ruthenium as its mixed component. Moreover, an embodiment of the invention concerns a radiation detector with the detector element with a ruthenium-containing contact layer and, optionally, with an evaluation unit to read out a detector signal, as well as a medical device with the radiation detector. Furthermore, a method for the production of a detector element is described which includes the installation step of a contact material of at least one of the metal contacts on the converter element, wherein the contact material includes a precious metal base with ruthenium as its mixed component.

Abstract: An X-ray detector is disclosed, in particular for a computed tomography system. In an embodiment, the X-ray detector includes a regular arrangement of measuring pixels for covering a measuring surface. A plurality of the measuring pixels of the regular arrangement are constructed as direct converting measuring pixels, and remaining ones of the measuring pixels are constructed as indirect converting measuring pixels.