Abstract: A method for texturing at least one substrate surface of at least one crystalline silicon substrate includes etching the substrate surface with fluorine gas in a plasma generated in a plasma etching room. A device for texturing at least one substrate surface of at least one crystalline silicon substrate includes a plasma etching room, a gas inlet device coupled with a fluorine source and at least one plasma source. High-quality texturing of silicon surfaces is made possible in a materially and environmentally friendly manner in the method by supplying the plasma etching room with at least gaseous sulfur oxide in addition to the fluorine gas and in the device by additionally coupling the gas inlet device with at least one sulfur oxide source.

Abstract: A substrate processing apparatus includes an evacuatable process chamber configured to receive a substrate carrier having at least one substrate, a plasma generating module, a gas feed, a gas discharge and a vapor etching module provided in the process chamber. A substrate processing method includes introducing a substrate carrier including at least one substrate into an evacuatable process chamber, generating a plasma in a plasma process using a plasma generating module in a gas or a gas mixture, performing a vapor etching of the at least one substrate before, after or alternatingly with the plasma process and performing at least one of a coating, etching, surface modification and cleaning of the substrate.