Abstract: A circuit, an adjusting method, and use of a control loop for adjusting a data retention voltage and/or a leakage current of a CMOS circuit for a sleep mode, wherein the CMOS circuit is operated to control in a measuring mode, whereby in the measuring mode a leakage current exclusively flows through the CMOS circuit, the control loop in the measuring mode adjusts the data retention voltage and/or the leakage current, and the adjustments of the control loop for the sleep mode are stored.

Abstract: A circuit, an adjusting method, and use of a control loop for adjusting a data retention voltage and/or a leakage current of a CMOS circuit for a sleep mode, wherein the CMOS circuit is operated to control in a measuring mode, whereby in the measuring mode a leakage current exclusively flows through the CMOS circuit, the control loop in the measuring mode adjusts the data retention voltage and/or the leakage current, and the adjustments of the control loop for the sleep mode are stored.

Abstract: A circuit, an adjusting method, and use of a control loop for adjusting a data retention voltage and/or a leakage current of a CMOS circuit for a sleep mode, wherein the CMOS circuit is operated to control in a measuring mode, whereby in the measuring mode a leakage current exclusively flows through the CMOS circuit, the control loop in the measuring mode adjusts the data retention voltage and/or the leakage current, and the adjustments of the control loop for the sleep mode are stored.

Abstract: In one embodiment, a cell of an integrated circuit includes a master-slave flip-flop and comparator logic having inputs adapted to receive an input signal of the master-slave flip-flop, an inverted input signal of the master-slave flip-flop, an output signal of the master-slave flip-flop, and an inverted output signal of the master-slave flip-flop. The master-slave flip-flop comprises a master flip-flop and a slave flip-flop. The slave flip-flop includes a first inverting element and a second inverting element. An output of the first inverting element is connectable to an input of the second inverting element and an output of the second inverting element to an input of the first inverting element. To output the output signal and the inverted output signal of the master-slave flip-flop, the output and the input of the second inverting element are connectable to the inputs of the comparator logic.

Abstract: An integrated circuit and a standard cell of an integrated circuit, having a master-slave flip-flop, having a comparator logic at whose inputs the input signal of the master-slave flip-flop, the inverted input signal of the master-slave flip-flop, the output signal of the master-slave flip-flop, and the inverted output signal of the master-slave flip-flops are present, wherein the master-slave flip-flop has a master flip-flop and a slave flip-flop, wherein the slave flip-flop has a first inverting element and a second inverting element. Whereby for feedback, an output of the first inverting element is connected to an input of the second inverting element and an output of the second inverting element to an input of the first inverting element.

Abstract: A circuit, control method, and use of a circuit for a sleep mode and an operating mode with a digital CMOS circuit with NMOS field-effect transistors and with PMOS field-effect transistors, with a first load device, whereby source terminals of the NMOS field-effect transistors of the digital CMOS circuit are connected via the first load device to a first supply voltage, and with a second load device, whereby source terminals of the PMOS field-effect transistors of the digital CMOS circuit are connected via the second load device to a second supply voltage, wherein the body terminals of the NMOS field-effect transistors of the digital CMOS circuit are connected directly to the first supply voltage, and the body terminals of the PMOS field-effect transistors of the digital CMOS circuit are connected directly to the second supply voltage.

Abstract: A circuit, an adjusting method, and use of a control loop for adjusting a data retention voltage and/or a leakage current of a CMOS circuit for a sleep mode, wherein the CMOS circuit is operated to control in a measuring mode, whereby in the measuring mode a leakage current exclusively flows through the CMOS circuit, the control loop in the measuring mode adjusts the data retention voltage and/or the leakage current, and the adjustments of the control loop for the sleep mode are stored.