Patents by Inventor Matthias Wegscheider

Matthias Wegscheider has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10943987
    Abstract: A transistor device includes at least one transistor cell, having, in a semiconductor body, a source region of a first doping type in a body region of a second doping type, a drain region, and a drift region of the first doping type adjoining the body region and arranged between the body region and the drain region. A low-resistance region of the second doping type in the body region adjoins the source region. A gate electrode dielectrically insulated from the source and body regions by a gate dielectric is arranged above a first surface of the semiconductor body. A length of an overlap between the source region and the gate electrode is larger than 70 nanometers. A doping profile of the low-resistance region along a line that is vertical to the first surface and goes through an edge of the gate electrode has a maximum of higher than 1E19 cm?3.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: March 9, 2021
    Assignee: Infineon Technologies Austria AG
    Inventors: Katarzyna Kowalik-Seidl, Bjoern Fischer, Winfried Kaindl, Markus Schmitt, Matthias Wegscheider
  • Publication number: 20190319110
    Abstract: A transistor device includes at least one transistor cell, having, in a semiconductor body, a source region of a first doping type in a body region of a second doping type, a drain region, and a drift region of the first doping type adjoining the body region and arranged between the body region and the drain region. A low-resistance region of the second doping type in the body region adjoins the source region. A gate electrode dielectrically insulated from the source and body regions by a gate dielectric is arranged above a first surface of the semiconductor body. A length of an overlap between the source region and the gate electrode is larger than 70 nanometers. A doping profile of the low-resistance region along a line that is vertical to the first surface and goes through an edge of the gate electrode has a maximum of higher than 1E19 cm?3.
    Type: Application
    Filed: June 25, 2019
    Publication date: October 17, 2019
    Inventors: Katarzyna Kowalik-Seidl, Bjoern Fischer, Winfried Kaindl, Markus Schmitt, Matthias Wegscheider
  • Patent number: 10374056
    Abstract: Disclosed is a method for producing a transistor device and a transistor device. The method includes: forming a source region of a first doping type in a body region of a second doping type in a semiconductor body; and forming a low-resistance region of the second doping type adjoining the source region in the body region. Forming the source region includes implanting dopant particles of the first doping type using an implantation mask via a first surface of the semiconductor body into the body region. Implanting the doping particles of the first doping type includes a tilted implantation.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: August 6, 2019
    Assignee: Infineon Technologies Austria AG
    Inventors: Katarzyna Kowalik-Seidl, Bjoern Fischer, Winfried Kaindl, Markus Schmitt, Matthias Wegscheider
  • Publication number: 20170125580
    Abstract: Disclosed is a method for producing a transistor device and a transistor device. The method includes: forming a source region of a first doping type in a body region of a second doping type in a semiconductor body; and forming a low-resistance region of the second doping type adjoining the source region in the body region. Forming the source region includes implanting dopant particles of the first doping type using an implantation mask via a first surface of the semiconductor body into the body region. Implanting the doping particles of the first doping type includes a tilted implantation.
    Type: Application
    Filed: October 28, 2016
    Publication date: May 4, 2017
    Inventors: Katarzyna Kowalik-Seidl, Bjoern Fischer, Winfried Kaindl, Markus Schmitt, Matthias Wegscheider