Abstract: In a capacitively operating MEMS microphone, by varying the BIAS voltage, the pull-in point is determined and the present pull-in voltage and the corresponding pull-in capacitance between membrane and back electrode are ascertained. From the deviation of the present pull-in point from the values of a first pull-in point, these values being determined after an end test and stored in an internal memory of the MEMS microphone, and the likewise stored values at a first operating point a recalibrated BIAS voltage is determined and set in order thereby to bring the sensitivity closer again to that at the original first operating point.

Abstract: An optoelectronic component (1) is proposed that comprises a housing body (2) and at least one semiconductor chip (8) disposed thereon, said housing body having a base part (13) comprising a connector body (16), on which a connecting conductor material (6, 7) is disposed, and said housing body having a reflector part (14) comprising a reflector body (23), on which a reflector material (9) is disposed, wherein said connector body and said reflector body are preformed separately from each other and said reflector body is disposed on said connector body in the form of a reflector top.

Abstract: A microphone package wherein an MEMS microphone chip (MIC) is mounted on a substrate (SUB) and is sealed with a cover (ABD) with respect to the substrate. The membrane (MMB) of the microphone chip is connected to a sound entry opening (SEO) in the substrate via an acoustic channel. As a result of defined dimensioning of, in particular, the cross section and length of sound entry opening and channel, an acoustic low-pass filter is formed, the ?3 dB attenuation point of which is significantly below the natural resonance of microphone membrane and package.

Abstract: A microphone package wherein an MEMS microphone chip (MIC) is mounted on a substrate (SUB) and is sealed with a cover (ABD) with respect to the substrate. The membrane (MMB) of the microphone chip is connected to a sound entry opening (SEO) in the substrate via an acoustic channel. As a result of defined dimensioning of, in particular, the cross section and length of sound entry opening and channel, an acoustic low-pass filter is formed, the ?3 dB attenuation point of which is significantly below the natural resonance of microphone membrane and package.

Abstract: A radiation-emitting or -receiving semiconductor chip 9 is soft-soldered for mounting on a leadframe 2 over which a prefabricated plastic encapsulant 5, a so-called premolded package, is injection-molded. Through the use of a low-melting solder 3 applied in a layer thickness of less than 10 ?m, the soldering process can be carried out largely without thermal damage to the plastic encapsulant 5.

Abstract: A display device, in particular a screen unit (6) for a screen (4), is provided which has a backlighting unit (8) for backlighting the screen (4), a polarisation filter (10), which is arranged in an emission direction of the backlighting unit (8) and which at least partially covers the backlighting unit (8), a liquid crystal layer (14), which is arranged on the side of the polarisation filter (10) remote from the backlighting unit (8), and a filter arrangement (16), which comprises at least one colour filter and which is arranged on the side of the liquid crystal layer (14) remote from the backlighting unit (8), wherein the backlighting unit (8) comprises a light-emitting diode (22) which emits blue light, and wherein at least two different phosphors are arranged downstream of the blue-light-emitting light-emitting diode (22), which phosphors absorb the blue light from the light-emitting diode (22) and re-emit light of mutually different colours, which mixes with the blue light from the light-emitting diode (

Abstract: A process is specified for producing a radiation-emitting component comprising a housing body and a carrier for a radiation-emitting semiconductor body, in which the carrier is produced in an injection molding process from a molding compound containing a metal.

Abstract: A method for producing an electrical contact of an optoelectronic semiconductor chip (1), comprising providing a mirror layer (2), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer (3) over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer (5) over said protective layer; and providing a solder layer (8) over said layer sequence.

Abstract: An optoelectronic component (1) having a semiconductor arrangement (4) which emits and/or receives electromagnetic radiation and which is arranged on a carrier (22) which is thermally conductively connected to a heat sink (12). External electrical connections (9) are connected to the semiconductor arrangement (4), where the external electrical connections (9) are arranged in electrically insulated fashion on the heat sink (12) at a distance from the carrier (22). This results in an optimized component in terms of the dissipation of heat loss and the radiation of light and also in terms of making electrical contact and the packing density in modules.

Abstract: An optoelectronic component (1) is proposed that comprises a housing body (2) and at least one semiconductor chip (8) disposed thereon, said housing body having a base part (13) comprising a connector body (16), on which a connecting conductor material (6, 7) is disposed, and said housing body having a reflector part (14) comprising a reflector body (23), on which a reflector material (9) is disposed, wherein said connector body and said reflector body are preformed separately from each other and said reflector body is disposed on said connector body in the form of a reflector top.

Abstract: The invention relates to an optoelectronic component containing an optoelectronic chip (1) and containing a chip carrier (2) that has a central region (3) on which the chip is fixed and that comprises terminals (41, 42, 43, 44) extending outwardly from the central region of the chip carrier (2) to the outside, wherein the chip and portions of the chip carrier are enveloped by a body (5) and wherein the projection of the body and that of each of the longitudinal axes of the terminals onto the contact plane between the chip and the chip carrier are substantially point-symmetrical with respect to the central point of the chip. The invention further relates to an arrangement comprising said component. The advantage of the symmetrical configuration of the component is that the risk of thermomechanically induced failures of the component is reduced.

Abstract: A method for producing an electrical contact of an optoelectronic semiconductor chip (1), comprising providing a mirror layer (2), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer (3) over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer (5) over said protective layer; and providing a solder layer (8) over said layer sequence.

Abstract: A process is specified for producing a radiation-emitting component comprising a housing body and a carrier for a radiation-emitting semiconductor body, in which the carrier is produced in an injection molding process from a molding compound containing a metal.

Abstract: An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.

Abstract: An optoelectronic component (1) having a semiconductor arrangement (4) which emits and/or receives electromagnetic radiation and which is arranged on a carrier (22) which is thermally conductively connected to a heat sink (12). External electrical connections (9) are connected to the semiconductor arrangement (4), where the external electrical connections (9) are arranged in electrically insulated fashion on the heat sink (12) at a distance from the carrier (22). This results in an optimized component in terms of the dissipation of heat loss and the radiation of light and also in terms of making electrical contact and the packing density in modules.

Abstract: The invention relates to an optoelectronic component containing an optoelectronic chip (1) and containing a chip carrier (2) that has a central region (3) on which the chip is fixed and that comprises terminals (41, 42, 43, 44) extending outwardly from the central region of the chip carrier (2) to the outside, wherein the chip and portions of the chip carrier are enveloped by a body (5) and wherein the projection of the body and that of each of the longitudinal axes of the terminals onto the contact plane between the chip and the chip carrier are substantially point-symmetrical with respect to the central point of the chip. The invention further relates to an arrangement comprising said component. The advantage of the symmetrical configuration of the component is that the risk of thermomechanically induced failures of the component is reduced.

Abstract: A radiation-emitting or -receiving semiconductor chip 9 is soft-soldered for mounting on a leadframe 2 over which a prefabricated plastic encapsulant 5, a so-called premolded package, is injection-molded. Through the use of a low-melting solder 3 applied in a layer thickness of less than 10 ?m, the soldering process can be carried out largely without thermal damage to the plastic encapsulant 5.

Abstract: In an optoelectronic component, having a semiconductor body (1) which includes a substrate (2) and a layer system (3) deposited on the substrate (2), a main surface of the semiconductor body (1) on the opposite side from the substrate (2) being secured to a support (4) by means of a soldered join (7), and the support (4) having a metallization (5) on the side facing the semiconductor body (1), wherein the metallization (5) is silver-free. Also disclosed is an optoelectronic component having a thin-film semiconductor body (8) which is secured to a support (4) by means of a soldered join (7), and the support (4) has a metallization (5) on the side facing the semiconductor body (8), in which the metallization (5) is silver-free.

Abstract: An electrical contact for an optoelectronic device which includes a mirror layer (2) of a metal or a metal alloy, a protective layer (3), which serves for reducing the corrosion of the mirror layer (2), a barrier layer (4), a coupling layer (5), and a solder layer (8). A contact of this type is distinguished by high reflectivity, good ohmic contact with respect to the semiconductor, good adhesion on the semiconductor and good adhesion of the layers forming the contact with one another, good thermal stability, high stability with respect to environmental influences, and also solderability and patternability.