Patents by Inventor Matthias Wuttig

Matthias Wuttig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase-change memory
    Patent number: 11817146
    Abstract: A phase-change memory (10) for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10). A method for non-volatile storage of binary contents in a phase-change memory (10), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10).
    Type: Grant
    Filed: April 21, 2020
    Date of Patent: November 14, 2023
    Assignee: Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
    Inventors: Shuai Wei, Matthias Wuttig, Yudong Cheng, Julian Pries, Xiaoling Lu
  • Phase-change memory
    Publication number: 20220215878
    Abstract: A phase-change memory (10) for the non-volatile storage of binary contents stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase. The state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10). A method for non-volatile storage of binary contents in a phase-change memory (10), which stores the binary contents electrically and/or optically in a non-volatile manner by locally switching a material (18) between an amorphous and a crystalline phase, whereby the state with respect to the electrical conductivity of the material (18) and/or the reflection properties of the material (18) determines the information content of the phase-change memory (10).
    Type: Application
    Filed: April 21, 2020
    Publication date: July 7, 2022
    Applicant: Rheinisch-Westfälische Technische Hochschule (RWTH) Aachen
    Inventors: Shuai WEI, Matthias WUTTIG, Yudong CHENG, Julian PRIES, Xiaoling LU
  • Phase change material layers and phase change memory devices including the same
    Patent number: 8017929
    Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.
    Type: Grant
    Filed: October 6, 2008
    Date of Patent: September 13, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Youn-seon Kang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Yoon-ho Khang, Cheol-kyu Kim, Dong-seok Suh, Tae-yon Lee
  • Doped phase change material and pram including the same
    Patent number: 7763886
    Abstract: Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100?(X+Y+Z). The index X of indium (In) is in the range of 25 wt %?X?60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %?Y?17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %<Z?75 wt %.
    Type: Grant
    Filed: October 31, 2007
    Date of Patent: July 27, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-ho Khang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Dong-seok Suh
  • Phase change material layers and phase change memory devices including the same
    Publication number: 20090179185
    Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.
    Type: Application
    Filed: October 6, 2008
    Publication date: July 16, 2009
    Inventors: Youn-seon Kang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Yoon-ho Khang, Cheol-kyu Kim, Dong-seok Suh, Tae-yon Lee
  • Doped phase change material and pram including the same
    Publication number: 20080149908
    Abstract: Provided are a doped phase change material and a phase change memory device including the phase change material. The phase change material, which may be doped with Se, has a higher crystallization temperature than a Ge2Sb2Te5 (GST) material. The phase change material may be InXSbYTeZSe100?(X+Y+Z). The index X of indium (In) is in the range of 25 wt %?X?60 wt %. The index Y of antimony (Sb) is in the range of 1 wt %?Y?17 wt %. The index Z of tellurium (Te) is in the range of 0 wt %<Z?75 wt %.
    Type: Application
    Filed: October 31, 2007
    Publication date: June 26, 2008
    Inventors: Yoon-ho Khang, Daniel Wamwangi, Matthias Wuttig, Ki-joon Kim, Dong-seok Suh