Patents by Inventor Matthieu C. Dartiailh

Matthieu C. Dartiailh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Topological qubit architecture based on josephson junction fabricated on two-dimensional electron gases
    Patent number: 11903330
    Abstract: The method of performing braiding operations can include providing a first Josephson junction including first gates. The method can include providing a second Josephson junction including second gates. The method can include tuning the first gates to dispose a first pair of Majorana fermions a first region. The method can include tuning the second gates to dispose a second pair of Majorana fermions in a second region. The method can include tuning the first gates to dispose a first Majorana fermion in the first region and to dispose a second Majorana fermion in a third region. The method can include tuning the second gates to dispose a third Majorana fermion in a fourth region and to dispose a fourth Majorana fermion in the second region.
    Type: Grant
    Filed: July 16, 2021
    Date of Patent: February 13, 2024
    Assignee: NEW YORK UNIVERSITY
    Inventors: Javad Shabani, Matthieu C. Dartiailh
  • TOPOLOGICAL QUBIT ARCHITECTURE BASED ON JOSEPHSON JUNCTION FABRICATED ON TWO-DIMENSIONAL ELECTRON GASES
    Publication number: 20220020914
    Abstract: The method of performing braiding operations can include providing a first Josephson junction including first gates. The method can include providing a second Josephson junction including second gates. The method can include tuning the first gates to dispose a first pair of Majorana fermions a first region. The method can include tuning the second gates to dispose a second pair of Majorana fermions in a second region. The method can include tuning the first gates to dispose a first Majorana fermion in the first region and to dispose a second Majorana fermion in a third region. The method can include tuning the second gates to dispose a third Majorana fermion in a fourth region and to dispose a fourth Majorana fermion in the second region.
    Type: Application
    Filed: July 16, 2021
    Publication date: January 20, 2022
    Applicant: NEW YORK UNIVERSITY
    Inventors: Javad Shabani, Matthieu C. Dartiailh