Abstract: According to the invention, an electrical heating resistor (1) is in contact with a receiving surface for heating a cell culture (CC), the resistor being connected to an electric circuit for providing heating power so as to keep the cell culture (CC) at a prescribed temperature setting (Tref). An element (61) for measuring at least one first parameter (VM), representing the amount of heating power used by the circuit, said measuring element (61) is also an element (61) for measuring the development of the cell culture, the device comprising a computer (62, 63) for calculating a second parameter (PAR), representing the development of the cell culture (CC) over time, on the basis of the first parameter (VM).

Abstract: A bolometer comprising an outer surface for the thermal absorption of incident radiation in thermal contact with a radiation measurement element having a variable resistance (R) depending on the temperature, the element being in a heat feedback loop comprising a corrector for applying a heating power to a resistive heating means in order to maintain the temperature of the resistor equal to a setpoint temperature (Tref). According to the invention, the resistive heating means comprises the element, the corrector is designed to generate a frequency component (S1) of the heating power, which is applied to a coupling means provided between the element and the corrector in order to apply a DC-free signal to the element, a coupling means, separate from the means, is provided between the element and a DC bias means in order to maintain the resistor at a prescribed continuous operation point.

Abstract: According to the invention, an electrical heating resistor (1) is in contact with a receiving surface for heating a cell culture (CC), the resistor being connected to an electric circuit for providing heating power so as to keep the cell culture (CC) at a prescribed temperature setting (Tref). An element (61) for measuring at least one first parameter (VM), representing the amount of heating power used by the circuit, said measuring element (61) is also an element (61) for measuring the development of the cell culture, the device comprising a computer (62, 63) for calculating a second parameter (PAR), representing the development of the cell culture (CC) over time, on the basis of the first parameter (VM).

Abstract: A method for manufacturing a device including a field of micrometric tips, including forming a polycrystalline layer on a support; performing an anisotropic plasma etching of all or part of the polycrystalline layer by using a gas mixture including chlorine and helium, whereby tips are formed at the surface of the polycrystalline layer.

Abstract: A method for manufacturing a device including a field of micrometric tips, including forming a polycrystalline layer on a support; performing an anisotropic plasma etching of all or part of the polycrystalline layer by using a gas mixture including chlorine and helium, whereby tips are formed at the surface of the polycrystalline layer.

Abstract: A bolometer comprising an outer surface for the thermal absorption of incident radiation in thermal contact with a radiation measurement element having a variable resistance (R) depending on the temperature, the element being in a heat feedback loop comprising a corrector for applying a heating power to a resistive heating means in order to maintain the temperature of the resistor equal to a setpoint temperature (Tref). According to the invention, the resistive heating means comprises the element, the corrector is designed to generate a frequency component (S1) of the heating power, which is applied to a coupling means provided between the element and the corrector in order to apply a DC-free signal to the element, a coupling means, separate from the means, is provided between the element and a DC bias means in order to maintain the resistor at a prescribed continuous operation point.

Abstract: A method for manufacturing a device including a field of micrometric tips, including forming a polycrystalline layer on a support; performing an anisotropic plasma etching of all or part of the polycrystalline layer by using a gas mixture including chlorine and helium, whereby tips are formed at the surface of the polycrystalline layer.