Abstract: In an embodiment a switch includes a first MOS transistor having its source connected to its channel-forming region and coupled with a first terminal of the switch, its drain coupled with a second terminal of the switch, and its gate connected to a first node of the switch, a diode coupling the first terminal with the first node, a capacitive element coupling a third terminal of the switch with the first node, the third terminal being configured to receive a control signal for the switch and a discharge circuit coupling the first node with the first terminal, the discharge circuit configured to conduct only when a voltage between the first node and the first terminal is greater than or equal to a threshold.