Patents by Inventor Matthieu Giraud-Carrier

Matthieu Giraud-Carrier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Three-dimensional capacitors with double metal electrodes
    Patent number: 12176147
    Abstract: Disclosed herein are IC structures with three-dimensional capacitors with double metal electrodes provided in a support structure (e.g., a substrate, a die, a wafer, or a chip). An example three-dimensional capacitor includes first and second capacitor electrodes and a capacitor insulator between them. Each capacitor electrode includes a planar portion extending across the support structure and one or more via portions extending into one or more via openings in the support structure. The capacitor insulator also includes a planar portion and a via portion extending into the via opening(s). The planar portion of the capacitor electrodes are thicker than the via portions. Each capacitor electrode may be deposited using two deposition processes, such as a conformal deposition process for depositing the via portion of the electrode, and a sputter process for depositing the planar portion of the electrode.
    Type: Grant
    Filed: June 24, 2021
    Date of Patent: December 24, 2024
    Assignee: Intel Corporation
    Inventors: James D. Waldemer, Matthieu Giraud-Carrier, Bernhard Sell, Travis W. Lajoie, Wilfred Gomes, Abhishek A. Sharma
  • THREE-DIMENSIONAL CAPACITORS WITH DOUBLE METAL ELECTRODES
    Publication number: 20220415573
    Abstract: Disclosed herein are IC structures with three-dimensional capacitors with double metal electrodes provided in a support structure (e.g., a substrate, a die, a wafer, or a chip). An example three-dimensional capacitor includes first and second capacitor electrodes and a capacitor insulator between them. Each capacitor electrode includes a planar portion extending across the support structure and one or more via portions extending into one or more via openings in the support structure. The capacitor insulator also includes a planar portion and a via portion extending into the via opening(s). The planar portion of the capacitor electrodes are thicker than the via portions. Each capacitor electrode may be deposited using two deposition processes, such as a conformal deposition process for depositing the via portion of the electrode, and a sputter process for depositing the planar portion of the electrode.
    Type: Application
    Filed: June 24, 2021
    Publication date: December 29, 2022
    Applicant: Intel Corporation
    Inventors: James D. Waldemer, Matthieu Giraud-Carrier, Bernhard Sell, Travis W. Lajoie, Wilfred Gomes, Abhishek A. Sharma