Abstract: A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.

Abstract: A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.

Abstract: A semiconductor device composed of a through-substrate-via (TSV) interconnect, and methods for forming the interconnect.

Abstract: A device includes vertically and laterally spaced sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the first wafer layer and a third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. A trench extends through the second wafer and through a portion of the signal routing layer. The trench electrically isolates a region of the second wafer layer surrounded by the trench from a remainder of the second wafer layer. Another active transducer element of another sensor is formed in this region. The transducer element formed in the second wafer layer may be a diaphragm for a pressure sensor of the sensor device.

Abstract: A device includes vertically and laterally spaced sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the first wafer layer and a third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. A trench extends through the second wafer and through a portion of the signal routing layer. The trench electrically isolates a region of the second wafer layer surrounded by the trench from a remainder of the second wafer layer. Another active transducer element of another sensor is formed in this region. The transducer element formed in the second wafer layer may be a diaphragm for a pressure sensor of the sensor device.

Abstract: A sensor device includes sensors that sense different physical stimuli. Fabrication of the device entails forming a device structure having a first and second wafer layers with a signal routing layer interposed between them. Active transducer elements of one or more sensors are formed in the second wafer layer. A third wafer layer is attached with the second wafer layer to produce one or more cavities in which the active transducer elements are located. Ports may be formed in the third wafer layer to adjust the pressure within the cavities during manufacture. The third wafer layer includes either a reference element or diaphragm of a pressure sensor. A fourth wafer layer may be coupled to the third wafer layer. The third and fourth wafer layers can include active and non-active circuitry such as integrated circuits, sensor components, microcontrollers, and the like.

Abstract: A semiconductor die includes a device structure having a micro-electronic device located at a surface of a substrate and a cap coupled to the device structure with the micro-electronic device positioned in a cavity located between the cap and the substrate. A sacrificial material is provided within the cavity, coupling the cap to the device structure. The sacrificial material is heated in the cavity to cause the sacrificial material to decompose to a gaseous species. The presence of the gaseous species in the cavity increases a pressure level in the cavity from an initial pressure to a final pressure.

Abstract: A semiconductor die includes a device structure having a micro-electronic device located at a surface of a substrate and a cap coupled to the device structure with the micro-electronic device positioned in a cavity located between the cap and the substrate. A sacrificial material is provided within the cavity, coupling the cap to the device structure. The sacrificial material is heated in the cavity to cause the sacrificial material to decompose to a gaseous species. The presence of the gaseous species in the cavity increases a pressure level in the cavity from an initial pressure to a final pressure.

Abstract: A method of fabricating a microelectromechanical (MEMS) device includes bonding a transducer wafer to a substrate wafer along a bond interface. An unpatterned transducer layer included within the transducer wafer is patterned. A release etch process is then performed during which a sacrificial layer is exposed to a selected release etchant to remove at a least a portion of the sacrificial layer through the openings in the patterned transducer layer. A release etch stop layer is formed between the sacrificial layer and the bond interface prior to exposing the sacrificial layer to the release etchant. The release etch stop layer prevents the ingress of the selected release etchant into the region of the MEMS device containing the bond interface during the release etch process.

Abstract: A method of fabricating a microelectromechanical (MEMS) device includes bonding a transducer wafer to a substrate wafer along a bond interface. An unpatterned transducer layer included within the transducer wafer is patterned. A release etch process is then performed during which a sacrificial layer is exposed to a selected release etchant to remove at a least a portion of the sacrificial layer through the openings in the patterned transducer layer. A release etch stop layer is formed between the sacrificial layer and the bond interface prior to exposing the sacrificial layer to the release etchant. The release etch stop layer prevents the ingress of the selected release etchant into the region of the MEMS device containing the bond interface during the release etch process.

Abstract: A multi-axis magnetic field sensing device combines two magnetoresistive sensors to measure the two orthogonal components X, Y of a magnetic field parallel to a system's plane and a Hall sensor to measure the Z component of the magnetic field substantially perpendicular to the system's plane. The two magnetoresistive sensors may be built together in one single chip and then stacked on top of a CMOS die embedding the Hall sensor and associated electronics for the signal processing management of the three sensors and the system's interface.

Abstract: A system and device for detecting yaw and changes in pitch angle for use with navigational and positional devices. The system and device include a multi-axis magnetic field sensing device and a controller. Preferably, the magnetic field sensing device is a multi-axis magnetic compass that is capable of sensing variations in pitch and yaw. The controller is adapted to process yaw and pitch rotational data to determine a positive or a negative change in pitch.

Abstract: A system and device for detecting yaw and changes in pitch angle for use with navigational and positional devices. The system and device include a multi-axis magnetic field sensing device and a controller. Preferably, the magnetic field sensing device is a multi-axis magnetic compass that is capable of sensing variations in pitch and yaw. The controller is adapted to process yaw and pitch rotational data to determine a positive or a negative change in pitch.

Abstract: Methods of packaging systems pressure-sensitive devices that are subject to human contact force are disclosed. The methods include coupling and attaching the sensing devices and at least one other integrated circuit to a substrate; applying and curing a relatively-soft, protective material over the sensing portion of the sensing device; positioning a covering tool over the cured material; applying and curing a relatively-hard, protective coating around the covering tool and the relatively-soft, protective material; and applying a second, relatively-soft, protective material in the void left by the withdrawn covering tool.

Abstract: Methods of packaging systems pressure-sensitive devices that are subject to human contact force are disclosed. The methods include coupling and attaching the sensing devices and at least one other integrated circuit to a substrate; applying and curing a relatively-soft, protective material over the sensing portion of the sensing device; positioning a covering tool over the cured material; applying and curing a relatively-hard, protective coating around the covering tool and the relatively-soft, protective material; and applying a second, relatively-soft, protective material in the void left by the withdrawn covering tool.