Abstract: Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Abstract: A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a conductive foil bonded to the semiconductor region.

Abstract: A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer.

Abstract: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

Abstract: A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a conductive foil bonded to the semiconductor region.

Abstract: A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer.

Abstract: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

Abstract: Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.

Abstract: Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, a semiconductor region can be formed in or above a substrate. A first metal layer can be formed over the semiconductor region. A laser can be applied over a first region of the metal layer to form a first metal weld between the metal layer and the semiconductor region, where applying a laser over the first region comprises applying the laser at a first scanning speed. Subsequent to applying the laser over the first region, the laser can be applied over a second region of the metal layer where applying the laser over the second region includes applying a laser at a second scanning speed. Subsequent to applying the laser over the second region, the laser can be applied over a third region of the metal layer to form a second metal weld, where applying the laser over the third region comprises applying the laser at a third scanning speed.

Abstract: Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, a semiconductor region can be formed in or above a substrate. A first metal layer can be formed over the semiconductor region. A laser can be applied over a first region of the metal layer to form a first metal weld between the metal layer and the semiconductor region, where applying a laser over the first region comprises applying the laser at a first scanning speed. Subsequent to applying the laser over the first region, the laser can be applied over a second region of the metal layer where applying the laser over the second region includes applying a laser at a second scanning speed. Subsequent to applying the laser over the second region, the laser can be applied over a third region of the metal layer to form a second metal weld, where applying the laser over the third region comprises applying the laser at a third scanning speed.

Abstract: A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a conductive foil bonded to the semiconductor region.

Abstract: Methods of fabricating a solar cell including metallization techniques and resulting solar cells, are described. In an example, a semiconductor region can be formed in or above a substrate. A first metal layer can be formed over the semiconductor region. A laser can be applied over a first region of the metal layer to form a first metal weld between the metal layer and the semiconductor region, where applying a laser over the first region comprises applying the laser at a first scanning speed. Subsequent to applying the laser over the first region, the laser can be applied over a second region of the metal layer where applying the laser over the second region includes applying a laser at a second scanning speed. Subsequent to applying the laser over the second region, the laser can be applied over a third region of the metal layer to form a second metal weld, where applying the laser over the third region comprises applying the laser at a third scanning speed.

Abstract: Solar cells having conductive contacts are described. In an example, a solar cell can include a protective layer disposed over a substrate, where the protective layer comprises a contact hole. A first metal layer disposed over the protective layer, where the first metal layer is electrically connected to the substrate through the contact hole. A second metal layer disposed over the first metal layer and a bond region disposed between the first metal layer and the second metal layer, where the bond region is located above a region of the protective layer without a contact hole.

Abstract: A solar cell can include a substrate and a semiconductor region disposed in or above the substrate. The solar cell can also include a conductive contact disposed on the semiconductor region with the conductive contact including a conductive foil bonded to the semiconductor region.

Abstract: A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a metal layer on the dielectric layer. The method can also include configuring a laser beam with a particular shape and directing the laser beam with the particular shape on the metal layer, where the particular shape allows a contact to be formed between the metal layer and the solar cell structure.

Abstract: Methods of fabricating solar cells using a metal-containing thermal and diffusion barrier layer in foil-based metallization approaches, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes forming a plurality of semiconductor regions in or above a substrate. The method also includes forming a metal-containing thermal and diffusion barrier layer above the plurality of semiconductor regions. The method also includes forming a metal seed layer on the metal-containing thermal and diffusion barrier layer. The method also includes forming a metal conductor layer on the metal seed layer. The method also includes laser welding the metal conductor layer to the metal seed layer. The metal-containing thermal and diffusion barrier layer protects the plurality of semiconductor regions during the laser welding.

Abstract: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

Abstract: Approaches for forming solar cells with a converted seed layer as a buffer material and the resulting solar cells are described. In an example, a method of fabricating a solar cell includes converting regions of a seed layer disposed on a plurality of p-n junctions of the solar cell to form a pattern of interdigitated converted regions. The converted regions are configured to electrically insulate non-converted regions of the seed layer from each other and provide a barrier to a laser that is, in fabricating the solar cell, directed towards the seed layer such that the barrier substantially avoids degradation of at least the plurality of p-n junctions from the laser.