Abstract: The disclosure relates to a method for growing an element III nitride, wherein the growth is carried out on a substrate made of a material capable of maintaining the same crystalline structure from the element III nitride growth temperature to room temperature, the substrate being an M-V—O4 alloy, where M denotes a transition metal or a Group III element, and where V denotes N, P, S, or Sb, or an (Si-IV)O2 alloy, where IV denotes a Group IV element other than silicon. The disclosure also relates to the structures and components obtained after the implementation of the method.