Abstract: A device for single-photon detection comprising two superconducting detectors, a bias-current source, a filter element and a readout circuit. Each detector forms a detection area for absorption of incident photons and is connected in parallel; each detector being maintained below its critical temperature and provided with an electrical bias current situated close to and below its critical current so as to be maintained in a non-resistive superconducting state, and configured to transition, at photon absorption, from the non-resistive state to a resistive state due to an increase in current density within the detector above the critical current. The readout circuit senses a voltage change corresponding to the, allowing creation of an event signal for each absorption of an incident photon by a detector. The device includes a current-redistribution portion for redistributing current arising after absorption of incident photons so as to avoid increases in current density above the critical current.

Abstract: A device for single-photon detection comprising two superconducting detectors, a bias-current source, a filter element and a readout circuit. Each detector forms a detection area for absorption of incident photons and is connected in parallel; each detector being maintained below its critical temperature and provided with an electrical bias current situated close to and below its critical current so as to be maintained in a non-resistive superconducting state, and configured to transition, at photon absorption, from the non-resistive state to a resistive state due to an increase in current density within the detector above the critical current. The readout circuit senses a voltage change corresponding to the, allowing creation of an event signal for each absorption of an incident photon by a detector. The device includes a current-redistribution portion for redistributing current arising after absorption of incident photons so as to avoid increases in current density above the critical current.