Patents by Inventor Matthieu Silly

Matthieu Silly has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8006315
    Abstract: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.
    Type: Grant
    Filed: December 20, 2006
    Date of Patent: August 23, 2011
    Assignees: Commissariat a l'Energie Atomique, Universite Paris SUD (Paris II)
    Inventors: Fabrice Charra, Matthieu Silly, Patrick Soukiassian
  • Publication number: 20090300805
    Abstract: The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.
    Type: Application
    Filed: December 20, 2006
    Publication date: December 3, 2009
    Applicants: Commissariat a l'Energie Atomique, Universite Paris SUD (Paris 11)
    Inventors: Fabrice Charra, Matthieu Silly, Patrick Soukiassian