Patents by Inventor Mattia Robustelli

Mattia Robustelli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change memory devices and systems having reduced voltage threshold drift and associated methods
    Patent number: 10043576
    Abstract: Phase change memory devices, systems, and associated methods are provided and described. Such devices, systems, and methods manage and reduce voltage threshold drift to increase read accuracy of phase change memory.
    Type: Grant
    Filed: February 28, 2017
    Date of Patent: August 7, 2018
    Assignee: Intel Corporation
    Inventor: Mattia Robustelli
  • PHASE CHANGE MEMORY DEVICES AND SYSTEMS HAVING REDUCED VOLTAGE THRESHOLD DRIFT AND ASSOCIATED METHODS
    Publication number: 20170243643
    Abstract: Phase change memory devices, systems, and associated methods are provided and described. Such devices, systems, and methods manage and reduce voltage threshold drift to increase read accuracy of phase change memory.
    Type: Application
    Filed: February 28, 2017
    Publication date: August 24, 2017
    Applicant: Intel Corporation
    Inventor: Mattia Robustelli
  • Phase change memory devices and systems having reduced voltage threshold drift and associated methods
    Patent number: 9627055
    Abstract: Phase change memory devices, systems, and associated methods are provided and described. Such devices, systems, and methods manage and reduce voltage threshold drift to increase read accuracy of phase change memory. A pre-read pulse can be delivered across a select device and a phase change material of a phase change memory cell to at least partially reset the voltage threshold drift of the select device while maintaining a program state of the phase change material.
    Type: Grant
    Filed: December 26, 2015
    Date of Patent: April 18, 2017
    Assignee: Intel Corporation
    Inventor: Mattia Robustelli
  • Phase change memory devices and systems having reduced voltage threshold drift and associated methods
    Patent number: 9583185
    Abstract: Phase change memory devices, systems, and associated methods are provided and described. Such devices, systems, and methods manage and reduce voltage threshold drift to increase read accuracy of phase change memory. A pre-read pulse can be delivered across a select device and a phase change material of a phase change memory cell to at least partially reset the voltage threshold drift of the select device while maintaining a program state of the phase change material.
    Type: Grant
    Filed: December 26, 2015
    Date of Patent: February 28, 2017
    Assignee: Intel Corporation
    Inventor: Mattia Robustelli
  • Semiconductor memory device and method of operating the same
    Patent number: 9349481
    Abstract: A method of operating a semiconductor memory device includes performing a first program operation in order to raise threshold voltages of memory cells, performing a program verification operation for detecting fast program memory cells, each having a threshold voltage risen higher than a first sub-verification voltage from a second sub-verification voltage or lower, by using a target verification voltage and the first sub-verification voltage and the second sub-verification voltage which are sequentially lower than the target verification voltage, and performing a second program operation under a condition that an increment of each of threshold voltages of memory cells, which is lower than the target verification voltage, is greater than an increment of the threshold voltage of each of the fast program memory cells.
    Type: Grant
    Filed: March 6, 2014
    Date of Patent: May 24, 2016
    Assignee: SK Hynix Inc.
    Inventors: Seiichi Aritome, Soo Jin Wi, Angelo Visconti, Mattia Robustelli
  • Reading memory cell history during program operation for adaptive programming
    Patent number: 9111631
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.
    Type: Grant
    Filed: July 7, 2014
    Date of Patent: August 18, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Angelo Visconti, Mattia Robustelli, Silvia Beltrami, Laura Tatiana Czeppel, Massimo Ernesto Bertuccio
  • READING MEMORY CELL HISTORY DURING PROGRAM OPERATION FOR ADAPTIVE PROGRAMMING
    Publication number: 20140321206
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.
    Type: Application
    Filed: July 7, 2014
    Publication date: October 30, 2014
    Inventors: Angelo Visconti, Mattia Robustelli, Silvia Beltrami, Laura Tatiana Czeppel, Massimo Ernesto Bertuccio
  • Reading memory cell history during program operation for adaptive programming
    Patent number: 8773907
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.
    Type: Grant
    Filed: May 24, 2013
    Date of Patent: July 8, 2014
    Assignee: Micron Technology, Inc.
    Inventors: Angelo Visconti, Mattia Robustelli, Slivia Beltrami, Laura Tatiana Czeppel, Massimo Ernesto Bertuccio
  • SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
    Publication number: 20140185387
    Abstract: A method of operating a semiconductor memory device includes performing a first program operation in order to raise threshold voltages of memory cells, performing a program verification operation for detecting fast program memory cells, each having a threshold voltage risen higher than a first sub-verification voltage from a second sub-verification voltage or lower, by using a target verification voltage and the first sub-verification voltage and the second sub-verification voltage which are sequentially lower than the target verification voltage, and performing a second program operation under a condition that an increment of each of threshold voltages of memory cells, which is lower than the target verification voltage, is greater than an increment of the threshold voltage of each of the fast program memory cells.
    Type: Application
    Filed: March 6, 2014
    Publication date: July 3, 2014
    Applicant: SK hynix Inc.
    Inventors: Seiichi ARITOME, Soo Jin WI, Angelo VISCONTI, Mattia ROBUSTELLI
  • Semiconductor memory device and method of operating the same
    Patent number: 8705287
    Abstract: A method of operating a semiconductor memory device includes performing a first program operation in order to raise threshold voltages of memory cells, performing a program verification operation for detecting fast program memory cells, each having a threshold voltage risen higher than a first sub-verification voltage from a second sub-verification voltage or lower, by using a target verification voltage and the first sub-verification voltage and the second sub-verification voltage which are sequentially lower than the target verification voltage, and performing a second program operation under a condition that an increment of each of threshold voltages of memory cells, which is lower than the target verification voltage, is greater than an increment of the threshold voltage of each of the fast program memory cells.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: April 22, 2014
    Assignee: SK Hynix Inc.
    Inventors: Seiichi Aritome, Soo Jin Wi, Angelo Visconti, Mattia Robustelli
  • READING MEMORY CELL HISTORY DURING PROGRAM OPERATION FOR ADVAPTIVE PROGRAMMING
    Publication number: 20130258774
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.
    Type: Application
    Filed: May 24, 2013
    Publication date: October 3, 2013
    Applicant: Micron Technology, Inc.
    Inventors: Angelo Visconti, Mattia Robustelli, Silvia Beltrami, Laura Tatiana Czeppel, Massimo Ernesto Bertuccio
  • Reading memory cell history during program operation for adaptive programming
    Patent number: 8451662
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.
    Type: Grant
    Filed: March 3, 2011
    Date of Patent: May 28, 2013
    Assignee: Micron Technology, Inc.
    Inventors: Angelo Visconti, Mattia Robustelli, Silvia Beltrami, Laura Czeppel, Massimo Bertuccio
  • Dynamic polarization for reducing stress induced leakage current
    Patent number: 8274832
    Abstract: Subject matter disclosed herein relates to non-volatile flash memory, and more particularly to a method of reducing stress induced leakage current.
    Type: Grant
    Filed: April 18, 2011
    Date of Patent: September 25, 2012
    Assignee: Micron Technology, Inc.
    Inventors: Luca Chiavarone, Mattia Robustelli, Angelo Visconti
  • READING MEMORY CELL HISTORY DURING PROGRAM OPERATION FOR ADAPTIVE PROGRAMMING
    Publication number: 20120224430
    Abstract: Subject matter disclosed herein relates to a memory device, and more particularly to write performance of a memory device.
    Type: Application
    Filed: March 3, 2011
    Publication date: September 6, 2012
    Applicant: Micron Technology, Inc.
    Inventors: Angelo Visconti, Mattia Robustelli, Silvia Beltrami, Laura Czeppel, Massimo Bertuccio
  • SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME
    Publication number: 20120106260
    Abstract: A method of operating a semiconductor memory device includes performing a first program operation in order to raise threshold voltages of memory cells, performing a program verification operation for detecting fast program memory cells, each having a threshold voltage risen higher than a first sub-verification voltage from a second sub-verification voltage or lower, by using a target verification voltage and the first sub-verification voltage and the second sub-verification voltage which are sequentially lower than the target verification voltage, and performing a second program operation under a condition that an increment of each of threshold voltages of memory cells, which is lower than the target verification voltage, is greater than an increment of the threshold voltage of each of the fast program memory cells.
    Type: Application
    Filed: October 26, 2011
    Publication date: May 3, 2012
    Inventors: Seiichi ARITOME, Soo Jin Wi, Angelo Visconti, Mattia Robustelli
  • DYNAMIC POLARIZATION FOR REDUCING STRESS INDUCED LEAKAGE CURRENT
    Publication number: 20110249501
    Abstract: Subject matter disclosed herein relates to non-volatile flash memory, and more particularly to a method of reducing stress induced leakage current.
    Type: Application
    Filed: April 18, 2011
    Publication date: October 13, 2011
    Inventors: Luca Chiavarone, Mattia Robustelli, Angelo Visconti
  • Dynamic polarization for reducing stress induced leakage current
    Patent number: 7940568
    Abstract: Subject matter disclosed herein relates to non-volatile flash memory, and more particularly to a method of reducing stress induced leakage current.
    Type: Grant
    Filed: December 30, 2008
    Date of Patent: May 10, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Luca Chiavarone, Mattia Robustelli, Angelo Visconti