Patents by Inventor MATTIAS BENGT BORG

MATTIAS BENGT BORG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor nanowire fabrication
    Patent number: 10727051
    Abstract: Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an elongate tunnel which extends, laterally over the substrate, between an opening in the template and a seed surface. The seed surface is exposed to the tunnel and of an area up to about 2×104 nm2. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface. There is also provided a method for fabricating a plurality of semiconductor nanowires on a substrate and a semiconductor nanowire and substrate structure.
    Type: Grant
    Filed: December 6, 2018
    Date of Patent: July 28, 2020
    Assignee: ELPIS TECHNOLOGIES INC.
    Inventors: Mattias Bengt Borg, Kirsten Emilie Moselund, Heike E. Riel, Heinz Schmid
  • SEMICONDUCTOR NANOWIRE FABRICATION
    Publication number: 20190109003
    Abstract: Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an elongate tunnel which extends, laterally over the substrate, between an opening in the template and a seed surface. The seed surface is exposed to the tunnel and of an area up to about 2×104 nm2. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface. There is also provided a method for fabricating a plurality of semiconductor nanowires on a substrate and a semiconductor nanowire and substrate structure.
    Type: Application
    Filed: December 6, 2018
    Publication date: April 11, 2019
    Inventors: MATTIAS BENGT BORG, KIRSTEN EMILIE MOSELUND, HEIKE E. REIL, HEINZ SCHMID
  • Semiconductor nanowire fabrication
    Patent number: 10153158
    Abstract: Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an elongate tunnel which extends, laterally over the substrate, between an opening in the template and a seed surface. The seed surface is exposed to the tunnel and of an area up to about 2×104 nm2. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface. There is also provided a method for fabricating a plurality of semiconductor nanowires on a substrate and a semiconductor nanowire and substrate structure.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: December 11, 2018
    Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Mattias Bengt Borg, Kirsten Emilie Moselund, Heike E. Riel, Heinz Schmid
  • SEMICONDUCTOR NANOWIRE FABRICATION
    Publication number: 20160351391
    Abstract: Methods are provided for fabricating semiconductor nanowires on a substrate. A nanowire template is formed on the substrate. The nanowire template defines an elongate tunnel which extends, laterally over the substrate, between an opening in the template and a seed surface. The seed surface is exposed to the tunnel and of an area up to about 2×104 nm2. The semiconductor nanowire is selectively grown, via said opening, in the template from the seed surface. The area of the seed surface is preferably such that growth of the nanowire proceeds from a single nucleation point on the seed surface. There is also provided a method for fabricating a plurality of semiconductor nanowires on a substrate and a semiconductor nanowire and substrate structure.
    Type: Application
    Filed: December 8, 2014
    Publication date: December 1, 2016
    Inventors: MATTIAS BENGT BORG, KIRSTEN EMILIE MOSELUND, HEIKE E RIEL, HEINZ SCHMID