Patents by Inventor Mattias Borg

Mattias Borg has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of semiconductor junctions
    Patent number: 10559657
    Abstract: Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.
    Type: Grant
    Filed: May 3, 2018
    Date of Patent: February 11, 2020
    Assignee: International Business Machines Corporation
    Inventors: Mattias Borg, Kirsten Moselund, Heinz Schmid, Heike Riel
  • FABRICATION OF SEMICONDUCTOR JUNCTIONS
    Publication number: 20180254319
    Abstract: Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.
    Type: Application
    Filed: May 3, 2018
    Publication date: September 6, 2018
    Inventors: Mattias Borg, Kirsten Moselund, Heinz Schmid, Heike Riel
  • Fabrication of semiconductor junctions
    Patent number: 10014373
    Abstract: Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.
    Type: Grant
    Filed: October 8, 2015
    Date of Patent: July 3, 2018
    Assignee: International Business Machines Corporation
    Inventors: Mattias Borg, Kirsten Moselund, Heinz Schmid, Heike Riel
  • FABRICATION OF SEMICONDUCTOR JUNCTIONS
    Publication number: 20170104058
    Abstract: Methods are provided for fabricating a semiconductor junction. A first semiconductor structure is selectively grown in a nanotube, which extends laterally over a substrate, from a seed extending within the nanotube. The seed is removed to expose the first semiconductor structure and create a cavity in the nanotube. A second semiconductor structure is selectively grown in the cavity from the first semiconductor structure, thereby forming a semiconductor junction between the first and second structures.
    Type: Application
    Filed: October 8, 2015
    Publication date: April 13, 2017
    Inventors: Mattias Borg, Kirsten Moselund, Heinz Schmid, Heike Riel