Abstract: Semiconductor devices for high frequency operations are described. The semiconductor devices include a substrate with an epitaxial layer. The epitaxial layer has higher resistivity than the substrate and includes a surface facing away from the substrate. The epitaxial layer includes a shallow trench isolation (STI) structure extended to a first depth from the surface, which is surrounded by a well structure. Underneath the STI structure, the epitaxial layer includes a lightly doped portion exclusive of dopant atoms of the well structure. Moreover, the STI structure includes an inner portion surrounded by a deep trench isolation structure extended to a second depth from the surface, the second depth being greater than the first depth. An integrated circuit component is located above the inner portion of the STI structure.

Abstract: The present disclosure generally relates to dopant profile control in a heterojunction bipolar transistor (HBT). In an example, a semiconductor device structure includes a semiconductor substrate and an HBT. The HBT includes a collector region, a base region, and an emitter region. The base region is disposed on or over the collector region. The emitter region is disposed on or over the base region. The base region is disposed on or over the semiconductor substrate and includes a heteroepitaxial sub-layer. The heteroepitaxial sub-layer is doped with a dopant. A concentration gradient of the dopant increases from a region in a layer adjoining and overlying the heteroepitaxial sub-layer to a peak concentration in the heteroepitaxial sub-layer without decreasing between the region and the peak concentration.

Abstract: A semiconductor device include a first semiconductor layer with a first doping concentration. A second semiconductor layer has a second doping concentration and has a first surface and a second opposing surface. The second doping concentration is higher than the first doping concentration. The first surface of the second semiconductor layer is in contact with the first semiconductor layer. A contact is on the second surface of the second semiconductor layer. The contact includes a metal and a semiconductor.

Abstract: The present invention relates to a method of providing a patient-specific dental fixture-mating arrangement, such as a dental abutment. According to the method, an arrangement is provided which can only be arranged in one rotational position with respect to a fixture in the jawbone of a patient. The arrangement is designed based on the orientation and inclination of the fixture relative to the jawbone. The invention also relates to a dental implant arrangement, comprising a dental fixture and a final dental restoration having mating indexing means.

Abstract: According to an aspect of the invention, in a set of male dental components, such as abutment screws, each male dental component has a threaded portion with different core diameter. Each male dental component is to be connected to a mating female dental component, such as an abutment. The smaller core diameter a threaded portion has, the higher friction is provided when the male dental component is finally tightened to its mating female dental component, even though the same insertion torque is applied to all male dental components.

Abstract: According to an aspect of the invention, in a set of male dental components, such as abutment screws, each male dental component has a threaded portion with different core diameter. Each male dental component is to be connected to a mating female dental component, such as an abutment. The smaller core diameter a threaded portion has, the higher friction is provided when the male dental component is finally tightened to its mating female dental component, even though the same insertion torque is applied to all male dental components.

Abstract: A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high breakdown voltage for the device. High breakdown voltage is maintained, because an increase in doping concentration of the drift region is minimized. A well region and a drift region are formed in the substrate adjacent to one another. A first shallow trench isolation (STI) region is formed on and adjacent to the well region, and a second STI region is formed on and adjacent to the drift region. A stress layer is deposited over the LDMOS transistor and in the second STI region, which propagates compressive or tensile stress into the drift region, depending on the polarity of the stress layer. A portion of the stress layer can be removed over the gate to change the polarity of stress in the inversion region below the gate.

Abstract: A lateral diffused metal-oxide-semiconductor field effect transistor (LDMOS transistor) employs a stress layer that enhances carrier mobility (i.e., on-current) while also maintaining a high breakdown voltage for the device. High breakdown voltage is maintained, because an increase in doping concentration of the drift region is minimized. A well region and a drift region are formed in the substrate adjacent to one another. A first shallow trench isolation (STI) region is formed on and adjacent to the well region, and a second STI region is formed on and adjacent to the drift region. A stress layer is deposited over the LDMOS transistor and in the second STI region, which propagates compressive or tensile stress into the drift region, depending on the polarity of the stress layer. A portion of the stress layer can be removed over the gate to change the polarity of stress in the inversion region below the gate.

Abstract: The present invention relates to a method of providing a patient-specific dental fixture-mating arrangement, such as a dental abutment. According to the method, an arrangement is provided which can only be arranged in one rotational position with respect to a fixture in the jawbone of a patient. The arrangement is designed based on the orientation and inclination of the fixture relative to the jawbone. The invention also relates to a dental implant arrangement, comprising a dental fixture and a final dental restoration having mating indexing means.

Abstract: According to an aspect of the invention, in a set of male dental components, such as abutment screws, each male dental component has a threaded portion with different core diameter. Each male dental component is to be connected to a mating female dental component, such as an abutment. The smaller core diameter a threaded portion has, the higher friction is provided when the male dental component is finally tightened to its mating female dental component, even though the same insertion torque is applied to all male dental components.