Abstract: Disclosed examples include a resistor comprising a semiconductor structure having a length dimension with first and second ends spaced from one another and an intermediate region between the first and second ends, first and second metal-semiconductor compound structures on the semiconductor structure proximate the first and second ends of the semiconductor structure, the first and second metal-semiconductor compound structures being spaced apart from each other along the length dimension of the semiconductor structure, and at least one intermediate metal-semiconductor compound structure on a portion of the intermediate region of the semiconductor structure between the first and second ends, the intermediate metal-semiconductor compound structure being spaced apart from the first and second metal-semiconductor compound structures on the semiconductor structure.

Abstract: Disclosed examples include a resistor comprising a semiconductor structure having a length dimension with first and second ends spaced from one another and an intermediate region between the first and second ends, first and second metal-semiconductor compound structures on the semiconductor structure proximate the first and second ends of the semiconductor structure, the first and second metal-semiconductor compound structures being spaced apart from each other along the length dimension of the semiconductor structure, and at least one intermediate metal-semiconductor compound structure on a portion of the intermediate region of the semiconductor structure between the first and second ends, the intermediate metal-semiconductor compound structure being spaced apart from the first and second metal-semiconductor compound structures on the semiconductor structure.

Abstract: Disclosed examples include a resistor comprising a semiconductor structure having a length dimension with first and second ends spaced from one another and an intermediate region between the first and second ends, first and second metal-semiconductor compound structures on the semiconductor structure proximate the first and second ends of the semiconductor structure, the first and second metal-semiconductor compound structures being spaced apart from each other along the length dimension of the semiconductor structure, and at least one intermediate metal-semiconductor compound structure on a portion of the intermediate region of the semiconductor structure between the first and second ends, the intermediate metal-semiconductor compound structure being spaced apart from the first and second metal-semiconductor compound structures on the semiconductor structure.

Abstract: Disclosed examples include a resistor comprising a semiconductor structure having a length dimension with first and second ends spaced from one another and an intermediate region between the first and second ends, first and second metal-semiconductor compound structures on the semiconductor structure proximate the first and second ends of the semiconductor structure, the first and second metal-semiconductor compound structures being spaced apart from each other along the length dimension of the semiconductor structure, and at least one intermediate metal-semiconductor compound structure on a portion of the intermediate region of the semiconductor structure between the first and second ends, the intermediate metal-semiconductor compound structure being spaced apart from the first and second metal-semiconductor compound structures on the semiconductor structure.