Abstract: A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.

Abstract: A method includes identifying a sequence of robot configurations associated with processing a plurality of substrates. The method further includes generating motion planning data comprising corresponding velocity data and corresponding acceleration data for each portion of a trajectory associated with the processing of the plurality of substrates. The method further includes causing a robot arm to be actuated based on the motion planning data.

Abstract: A robot device includes a first link and a second link coupled to the first link via an elbow. One or more of the first link or the second link rotates about an axis of the elbow. The robot device further includes a generator disposed in the elbow. The generator is configured to generate electrical power based on relative angular mechanical movement associated with the elbow. The robot device further includes an end effector configured to transport a substrate within a substrate processing system. The end effector is disposed at a distal end of the second link. The end effector is to receive the electrical power generated by the generator.

Abstract: Disclosed herein are embodiments of an electrostatic end effector, and methods of manufacturing the same. In one embodiment, an electrostatic end effector comprises a ceramic base, a first electrode layer coupled to the ceramic base, and a second electrode layer coupled to the ceramic base. The electrostatic end effector is configured to generate an electrostatic force upon a substrate responsive to a voltage applied to the first electrode. The electrostatic force upon the substrate may increase the friction force upon the substrate which may allow the end effector to accelerate at faster rates than current technologies allow without the substrate slipping on the end effector.

Abstract: A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.

Abstract: A robot apparatus is configured to extend a first end effector into a first process chamber and extend a second end effector into a second process chamber. The first process chamber and the second process chamber are separated by a first pitch. The robot apparatus is further configured to retract the first end effector and the second end effector into a rectangular mainframe while maintaining a distance between the substrates bounded by the first pitch throughout a retraction process, and fold the first end effector and the second end effector inward within a sweep diameter defined by a width of the rectangular mainframe.

Abstract: A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.

Abstract: An autoteach system includes an autoteach pin that is a scannable feature having a fixed position within the autoteach system. The autoteach pin enables an autoteach operation of a robot arm of the wafer processing system. The autoteach operation is an operation to automatically teach the fixed position within the autoteach system to the robot arm of the wafer processing system. The autoteach pin includes a first portion including a cylindrical sidewall. The robot arm is to use the first portion to locate the fixed position within the autoteach system. The autoteach portion further includes a second portion including planar sidewalls that are configured to enable calibration of robot arm error.

Abstract: An autoteach enclosure system includes a plurality of surfaces that at least partially enclose an interior volume of the autoteach enclosure system. The autoteach enclosure system further includes an autoteach pin at least partially disposed within the interior volume. The autoteach pin is a scannable feature having a fixed position within the autoteach enclosure system. The autoteach enclosure system further includes a front interface coupled to one or more of the plurality of surfaces to interface the autoteach enclosure system with a substantially vertical portion of a load port of a wafer processing system. The autoteach pin enables an autoteach operation of a robot arm of the wafer processing system. The autoteach operation is an operation to automatically teach the fixed position within the autoteach enclosure system to the robot arm of the wafer processing system.

Abstract: A robot device includes a first link and a second link coupled to the first link via an elbow. One or more of the first link or the second link rotates about an axis of the elbow. The robot device further includes a generator disposed in the elbow. The generator is configured to generate electrical power based on relative angular mechanical movement associated with the elbow. The robot device further includes an end effector configured to transport a substrate within a substrate processing system. The end effector is disposed at a distal end of the second link. The end effector is to receive the electrical power generated by the generator.

Abstract: A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.

Abstract: An autoteach enclosure system includes a plurality of surfaces that at least partially enclose an interior volume of the autoteach enclosure system. The autoteach enclosure system further includes an autoteach pin at least partially disposed within the interior volume. The autoteach pin is a scannable feature having a fixed position within the autoteach enclosure system. The autoteach enclosure system further includes a front interface coupled to one or more of the plurality of surfaces to interface the autoteach enclosure system with a substantially vertical portion of a load port of a wafer processing system. The autoteach pin enables an autoteach operation of a robot arm of the wafer processing system. The autoteach operation is an operation to automatically teach the fixed position within the autoteach enclosure system to the robot arm of the wafer processing system.